IRL3715ZSTRR Allicdata Electronics
Allicdata Part #:

IRL3715ZSTRR-ND

Manufacturer Part#:

IRL3715ZSTRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 50A D2PAK
More Detail: N-Channel 20V 50A (Tc) 45W (Tc) Surface Mount D2PA...
DataSheet: IRL3715ZSTRR datasheetIRL3715ZSTRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Many different types of transistors are used in various industrial and commercial applications. The IRL3715ZSTRR MOSFET is one of the most commonly used transistors in these applications. It is the most advanced and efficient MOSFET available on the market today, and is used in a wide range of applications. In this article, we will discuss the application field and working principle of the IRL3715ZSTRR MOSFET.

The IRL3715ZSTRR is a 60V N-channel enhancement-type vertical DMOS power transistor, with a total gate charge of only 5.7nC. Its maximum current handling capability is up to 55A. In addition to its excellent current handling capability, it has a wide operating temperature range of -55 to +175°C, making it well suited for a variety of environmental conditions. The IRL3715ZSTRR is a cost-effective solution for high current and voltage applications.

The main application of the IRL3715ZSTRR is its use in power conversion. It can be used to convert high voltages and currents, while providing excellent efficiency and reliability. It can be used in applications such as DC-DC converters, AC-DC converters, and motor drivers. It is also used in high-efficiency switching power supplies, and ultra-fast switching applications.

The working principle of the IRL3715ZSTRR is based on the MOSFET structure. The MOSFET structure consists of a Gate, Source and Drain, which form a three-terminal device. When an electric field is applied to the Gate, the current conducts between the Source and Drain. The current flow between the Source and Drain is controlled by the voltage applied to the Gate, allowing for precise control of the current flow.

The IRL3715ZSTRR is characterized by a low on-resistance, low forward voltage drop, and fast switching time. The low on-resistance helps to reduce power dissipation, while the low forward voltage drop allows for higher efficiency in power conversion applications. The fast switching time also helps to reduce unwanted losses in power conversion.

The IRL3715ZSTRR is manufactured using a Trench Gate Process. This process helps to achieve excellent thermal resistance and maximum performance. The gate oxide layer is also optimized to provide excellent robustness and reliability.

In conclusion, the IRL3715ZSTRR is a high-performance and efficient MOSFET, designed for use in power conversion applications. Its low on-resistance, low forward voltage drop, and fast switching time makes it well suited for power conversion. It is also characterized by high durability and reliability.

The specific data is subject to PDF, and the above content is for reference

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