Allicdata Part #: | IRL3714TR-ND |
Manufacturer Part#: |
IRL3714TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 36A TO-220AB |
More Detail: | N-Channel 20V 36A (Tc) 47W (Tc) Through Hole TO-22... |
DataSheet: | IRL3714TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | HEXFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.7nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 670pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 47W (Tc) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
Description
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<p>The IRL3714TR is a standard MOSFET (Metal Oxide Semiconductor Field Effect Transistor), with single-shaped metal oxide semiconductor layers arranged around a highly conductive gate which is used to control a current passing through the transistor. This type of transistor is typically used in applications where switching large currents and high power outputs are required, such as in industrial or automotive applications.</p><p>The IRL3714TR MOSFET is specifically designed for the applications of power supply switch control, DC to AC conversion, and as a high-efficiency switch for controlling high-power amplifiers. It is highly reliable and efficient, with a maximum voltage rating of 500V and a maximum current rating of 10A. This MOSFET is characterised by a low on-resistance, which makes it suitable for a variety of applications.</p><p>The basic working principle of a MOSFET is illustrated in Figure 1. Electrons are injected from the gate into the channel, which is created between the source and drain of the MOSFET. The majority carriers will flow from the drain to the source, and as a result, a current is created in the channel. The control of the current is achieved by controlling the number of electrons injected in the channel, which is accomplished by controlling the voltage applied to the gate.</p><p>The IRL3714TR is a specifically designed MOSFET for power supply switch control, current sensing, and temperature sensing. It has a low on-resistance of 4.9 mΩ, making it ideal for low-power applications. It also has very low gate-source capacitance, which provides a fast switching response time. In addition, it has built-in reverse bias protection, over-current protection, over-temperature protection, overtemperature shutdown, and reverse current protection.</p><p>The IRL3714TR is widely used in consumer electronics and automotive applications, as it is capable of controlling the high-powered devices in these systems. It is highly efficient, reliable, and easy to use, and is suitable for a wide range of applications.</p>The specific data is subject to PDF, and the above content is for reference
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