Allicdata Part #: | IRL3103D1SPBF-ND |
Manufacturer Part#: |
IRL3103D1SPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 64A D2PAK-5 |
More Detail: | N-Channel 30V 64A (Tc) 3.1W (Ta), 89W (Tc) Surface... |
DataSheet: | IRL3103D1SPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | FETKY™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 34A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.1W (Ta), 89W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IRL3103D1SPBF is a part of the IRL3103D1SPB product family, which is a high-performance N-channel MOSFET with ultra-low gate charge (Qg) and low on-resistance (Rdson). It is a low-voltage, single N-channel MOSFET with a maximum drain-source voltage (Vds) of 45V and a drain current (Id) of 3A. It features excellent switching performance, with an extremely low Qrr of 7ns, making it suitable for high-speed switching applications.
The IRL3103D1SPBF is widely used in a variety of applications such as DC-DC conversion, polarity switching, and motor control. Its ultra-low gate charge and very low on-resistance make it suitable for high-speed switching applications in power supplies and other power management systems. Furthermore, its low capacitance facilitates fast switching in switching regulators and power supplies.
The working principle of the IRL3103D1SPBF MOSFET is based on the MOSFET\'s gate-source voltage (Vgs) to determine their conductivity. It works on the principle that when a voltage is applied to the gate of the MOSFET, electrons are attracted to the gate region and this changes the conductivity of the channel to allow current to flow between the drain and the source. A higher Vgs will result in higher on-resistance and higher conductance.
The IRL3103D1SPBF can be used in many different types of applications and is built to withstand harsh environments, with excellent ESD and surge protection. It is also highly reliable and offers very low gate-source thresholds to ensure fail-safe operation. Additionally, its low input capacitance and output capacitance make it an ideal choice for high-speed switching applications in power supplies, switching converters, and motor controllers.
Overall, the IRL3103D1SPBF is a highly reliable and powerful MOSFET with good switching performance and power efficiency. Its wide operating range and low on-resistance make it an ideal solution for a variety of applications such as DC-DC conversion, polarity switching, and motor control. Its ultra-low gate charge and very low on-resistance make it suitable for high-speed switching applications in power supplies and other power management systems. Additionally, its low capacitance facilitates fast switching in switching regulators and power supplies. Thus, the IRL3103D1SPBF is an excellent choice for a number of applications where switching and power efficiency is critical.
The specific data is subject to PDF, and the above content is for reference
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IRL3103D1SPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 64A D2PAK... |
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