IRL3713PBF Allicdata Electronics
Allicdata Part #:

IRL3713PBF-ND

Manufacturer Part#:

IRL3713PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 260A TO-220AB
More Detail: N-Channel 30V 260A (Tc) 330W (Tc) Through Hole TO-...
DataSheet: IRL3713PBF datasheetIRL3713PBF Datasheet/PDF
Quantity: 517
Stock 517Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5890pF @ 15V
FET Feature: --
Power Dissipation (Max): 330W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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IRL3713PBF is a low-cost, high-performance and high-density Power MOSFET that is widely used in many electronic applications. This transistor is used to switch high-current loads. It is a Power MOSFETs with a dual N-channel and single P-channel MOSFET structure design. It has high efficiency, low on-resistance, excellent gate charge, fast switching, and low gate threshold voltage. This MOSFET offers better stability and reliability than traditional MOSFETs.

The main application areas of IRL3713PBF include industrial power applications, communication power supplies, and consumer electronics. It is also used in automotive applications including wireless remote controller, converter circuit, and constant voltage DCDC converter. The device is well suited for batteries, solar energy, fast mobile charging and other high frequency switching applications.

This transistor is also used in automotive, robots, and other related devices, due to its fast switching performance, high current carrying capacity, and low power dissipation. The IRL3713PBF offers good temperature stability and improved efficiency, making it an ideal choice for high-power applications. It is also used in motor controllers, solid state switches, and motor drive systems.

The working principle of an IRL3713PBF MOSFET is based on the conventionally-controlled transfer of electricity between two insulated metallic surfaces that are not in contact with each other. In a MOSFET, an insulated semiconductor layer is located between the two metallic surfaces and provides a path for electrons to flow. The MOSFET is normally in an “on” state and will only turn “off” when a voltage (or current) is applied to its gate. When the voltage is reduced, electrons begin flowing from the source to the drain and the device is turned “on” again.

The IRL3713PBF is a reliable and low-cost solution for applications which require high current handling capacity and excellent thermal performance. The device offers improved characteristics compared to standard MOSFETs. With its high current and fast switching capability the device can be used in a variety of industrial, automotive, and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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