IRL3715ZCSTRRP

Vgs(th) (Max) @ Id:	2.55V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	45W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	870pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	11nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	11 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRL3715ZCSTRRP Application Field and Working Principle

The evolution of modern technology has enabled the development of transistors like the International Rectifier IRL3715ZCSTRRP which is an enhanced Power MOSFET. This advanced device has revolutionized the manufacturing industry with its ability to deliver higher efficiency at lower power levels than many other traditional technologies. With its distinctive application field and effective working principle, it is often used for a variety of tasks such as switching and amplification.

Application Field

The IRL3715ZCSTRRP is a type of Power MOSFET which are normally used in power applications relying on power management and regulation. It is well-suited for applications such as switching power supplies, high-power amplifiers, radio frequency amplifiers and other advanced digital power applications. It can also be used in mobile applications such as smart phones, PDAs, laptops and other devices requiring high power delivery.

Working Principle

The IRL3715ZCSTRRP incorporates an advanced power MOSFET technology called the Double-Diffused MOSFET. This structure allows the device to deliver much higher current and power while still being able to switch at very high frequencies. It is also able to maintain low on-resistance levels even in extreme temperatures (-55 to +175°C). As a power switching device, the IRL3715ZCSTRRP is constructed from a P-body which acts as the common drain terminal and an N channel which functions as the channel. When a voltage is applied to the gate terminal, the N-channel is activated and the electron flow is altered based on the amount of potential difference between the gate terminal and the source terminal. This benefits the device by allowing for low conduction losses and optimizing the switch characteristics.

Performance Characteristics

The IRL3715ZCSTRRP is characterized by its high performance characteristics while enabling a wide range of applications. This device has an improved switching time characteristics that includes low gate charge and low on-resistance. This simply implies that it is faster to switch on and off, thus leading to improved efficiency of the overall switching power supply. It has a maximum drain source voltage of 30 V and a maximum drain current at 25A which gives it a power dissipation capability of 600V and 225 W. This makes it well suited for applications requiring high power delivery such as high power amplifiers and switching regulators.

Conclusion

The International Rectifier IRL3715ZCSTRRP is that a higher performance power MOSFET which benefits from advanced characteristics such as low gate charge and fast switching times. It is often used in power applications such as power factor correction and switching power supplies due to its improved efficiency. With its wide range of application fields, this advanced device has provided an essential solution for a number of power management and regulation tasks.

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