
Allicdata Part #: | IRL3103D1S-ND |
Manufacturer Part#: |
IRL3103D1S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 64A D2PAK |
More Detail: | N-Channel 30V 64A (Tc) 3.1W (Ta), 89W (Tc) Surface... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 4.5V |
Series: | FETKY™ |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 34A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRL3103D1S is a single field-effect transistor (FET) device specifically designed to operate as either a low voltage, low gate drive, single P-channel MOSFET i.e. an IRL3103D1S, in applications requiring a strong gate capacitance and fast switching response time for effective system operation under dynamic conditions. IRl3103D1S offers near-ideal FET device characteristics for operation in both linear and digital modes, providing superior performance for a wide range of power management applications.
IRL3103D1S has a wide Vds range from -0.5V to -54V, which enables it to operate as a high voltage, low gate drive P Channel device in applications such as motor control, DC/DC converters, or low voltage off-line power supplies. It also offers a low Vgs threshold of -3.8V, meaning it will remain on in a drain bias independent manner. Furthermore, the device features an on-resistance range of 2.3 mOhm to 0.15 mOhm, which provides superior device performance in terms of higher currents, greater power efficiency, and faster switching times.
In terms of its working principle, the IRL3103D1S operates as a P-channel device, meaning the gate voltage works in a positive direction. When the voltage applied to the gate is between 0V and the Vgs threshold, the device is in a cut-off mode. This means the channel between the drain and the source does not conduct, and the device does not pass current. When the voltage applied to the gate rises above the gate threshold, the gate-source junction conducts, allowing the flow of current from drain to source. As the voltage increases even more, the amount of current flow increases. This is because more electrons are being injected into the channel region, bringing the channel closer and closer to being completely filled.
This device has a number of advantages, such as high input impedance, capability of handling high frequency signals, low drain-source on-resistance and fast switching times, making it an ideal choice for many applications. Ideal applications of IRL3103D1S include power management, battery protection circuits and switch gear, DC/DC converters, lighting, motor control, or any other application requiring a high-speed, high-current FET. It is designed to ensure superior performance under dynamic conditions.
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