IRL3502S

Series:	HEXFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 7V
Rds On (Max) @ Id, Vgs:	7 mOhm @ 64A, 7V
Vgs(th) (Max) @ Id:	700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 4.5V
Vgs (Max):	±10V
Input Capacitance (Ciss) (Max) @ Vds:	4700pF @ 15V
FET Feature:	--
Power Dissipation (Max):	140W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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IRL3502S Application Field and Working Principle

The IRL3502S is an integrated circuit (IC) designed primarily as a logic-level-compatible N-Channel MOSFET transistor. The IRL3502S is designed to control large currents and provide high power levels with low gate-source impedance. Additionally, the device offers excellent thermal performance and provides excellent protection to the gate oxide and field oxide. Moreover, it has low-on-state and reverse drain-source charge leakage. Due to its unique design, this IC is suitable for various applications and convenient for system designers.

Application Field of IRL3502S

The IRL3502S is primarily used in automotive, industrial, medical and even telecommunications applications due to its strength and versatile design. It is well-suited for gate driver applications, battery management systems, and external power switches. This transistor is also versatile due to its ability to maintain a low on-state resistance and impressive RDS(on).In automotive applications, the IRL3502S can be used as an external power switch in clean power systems and engine control units. It is also used as a load switch in power management systems, such as in start-stop and traction control features. Additionally, the IRL3502S is suitable for high-current applications due to its low gate-source impedance and product robustness. Such applications include DC-DC converters, pulse-width modulation (PWM) circuits, overcurrent protection circuits, electrical current limiters, and inverters.The IRL3502S is also commonly used in PWM systems to control large motors, such as in electric and hybrid vehicle powertrain systems. Moreover, this IC is ideal for high-current output amplifiers due to its low gate-source impedance, enabling higher power output. Furthermore, the IRL3502S is used to provide power-on control, current limitation, and high-voltage isolation in medical equipment, such as ultrasound imaging scanners and X-ray machines. In industrial automation systems, the IRL3502S is used in the form of relays for output current scaling and protection.

Working Principle of IRL3502S

Understanding the working principle of a logic-level-compatible N-Channel MOSFET transistor is important to be able to know how to use the IRL3502S. The integrated circuit essentially consists of two gates and a drain. The drain acts as a power source, while the two gates are used to control the flow of current between the source and drain. The gate with the higher voltage turns on the transistor and allows current to flow between the source and drain. The gate with the lower voltage turns off the transistor and blocks the flow of current between the source and drain. The addition of a logic level to the IRL3502S transistor allows it to be used in logic circuits. This means that the device can switch between open circuit and short circuit from a single logic input. This is accomplished by connecting the gates to either ground or power. When there is no voltage present at the gate connected to ground, the transistor will turn off and block the flow of current between the source and drain. When there is a voltage present at the gate connected to power, the transistor will turn on and allow current to flow between the source and drain.In addition, the IRL3502S has a “body effect” which means that the resistance between the drain and source changes according to the voltage applied across them. When the voltage is increased, the resistance decreases, allowing more current to flow. Conversely, when the voltage is decreased, the resistance increases, limiting the flow of current. The IRL3502S is designed to provide reliable performance by offering excellent thermal performance, current capacity, and gate oxide protection. Furthermore, it has low-on-state and reverse drain-source charge leakage. This transistor is also designed with a low gate-source resistance ensuring high power levels can be achieved.In conclusion, the IRL3502S is an ideal logic-level-compatible N-Channel MOSFET transistor for numerous applications, due to its strength, versatile design and excellent thermal performance. Moreover, its low gate-source impedance and product robustness make it well-suited for various applications and convenient for system designers.

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