IRL3803PBF

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IRL3803PBF is an advanced power metal oxide semiconductor field-effect transistor (MOSFET) device created by International Rectifier Corporation. It is designed for demanding application fields, such as switched mode power supplies, motor drives, and power conversion applications in consumer, industrial, automotive and various other applications. This MOSFET features low RDS(on) and low gate charge and is available in an LFPAK56 package, making it a perfect fit for a range of applications.

The device with the IRL3803PBF marking code is a N-channel Enhanced FET developed by International Rectifier to meet the needs of high current and high frequency applications. It is identical to their IRL3803 MOSFET with the PBF suffix denoting the new Enhanced FET package. The other major difference are the gate-to-drain (G-D) internal capacitances. This type of device is rarely used, mainly because of its small size and relatively low current bearing capacity.

The IRL3803PBF features a P-channel enhancement MOSFET with a maximum operating temperature of 150°C. This temperature rating is sufficient for the majority of applications. Its breakdown voltage rating is also impressive, with a maximum drain-source rating of 30 V. Furthermore, this device uses a low input capacitance of 10 pF at a 10V gate source voltage. This feature significantly reduces power losses and noise due to unwanted switching.

The IRL3803PBF MOSFET has a robust construction. It incorporates a dual high-k dielectric layer between the gate and the aluminium contact. This dielectric layer improves the device’s thermal stability and immunity to transient disturbances. Furthermore, a single-handed design allows users to monitor and adjust the device’s current gain easily by means of a built-in current sensing circuit.

The IRL3803PBF boasts a peak drain-source current rating of 35A at a temperature of 25°C. This rating should be more than sufficient to meet the needs of a wide range of applications. And, due to its low input capacitance and low gate-to-drain capacitance, it offers low conduction losses and improved switching frequency. This makes the IRL3803PBF an ideal choice for applications requiring a high switching speed.

The working principle of the IRL3803PBF can be broken down into four stages: Off-state, On-state, Saturation, and Safe-operation-area (SOA) limits. In the off-state, there is no current flow between the source and the drain. The gate-to-source voltage, VGS, must exceed the device’s threshold voltage, VT, for it to switch to the on-state. In the on-state, current flows between the source and the drain. As the voltage increases, the drain current eventually reaches its peak value and the MOSFET is said to be in saturation. At this point, any further increase in VGS will cause the MOSFET to destroy itself due to high peak currents. To ensure safe operation, the SOA limit should never be exceeded. This limit is reached when the device is still in the on-state but the peak current is sufficient to cause device failure.

In summary, the IRL3803PBF MOSFET offers excellent performance in switched mode power supplies, motor drives and power conversion applications. It has low input capacitance and low gate-to- drain capacitance, resulting in improved switching frequency and reduced power losses. Its high current handling capacity, coupled with high temperature rating, make it a reliable option for even the most demanding applications.

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