IRL3502STRLPBF Allicdata Electronics
Allicdata Part #:

IRL3502STRLPBF-ND

Manufacturer Part#:

IRL3502STRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 110A D2PAK
More Detail: N-Channel 20V 110A (Tc) 140W (Tc) Surface Mount D2...
DataSheet: IRL3502STRLPBF datasheetIRL3502STRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HEXFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Rds On (Max) @ Id, Vgs: 7 mOhm @ 64A, 7V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 110nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 15V
FET Feature: --
Power Dissipation (Max): 140W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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IRL3502STRLPBF is a vertical power field-effect transistor (PFET) specifically designed to address the needs of the very low voltage and low power applications. This transistor has a wide variety of applications and can also be used as an alternative to bipolar transistors.

The IRL3502STRLPBF transistor has an unique dual-metal structure which includes a high performance lateral P-channel MOSFET and passively integrated Schottky diode. This device has excellent switching speed, low on-state resistance, fast body diode and low capacitance for fast switching and extreme low power dissipation. This PFET also features a low level gate drive, low threshold voltage and low gate-source capacitance for optimized performance. The package is designed to provide optimum space and cost savings.

The primary application of the IRL3502STRLPBF device is in systems that require switching and regulated control of DC power supplies. This transistor can be used in devices such as switching regulators, dc-to-dc converters, simple voltage regulators, power management circuits, power-on reset devices, and controlled switch circuits. It is also widely used in telecommunications, battery-operated systems, automotive or automotive-like applications, and Solar Cell applications.

The working principle of the IRL3502STRLPBF involves controlling the amount of current flowing through the transistor. This is done by controlling the voltage applied to the gate of the transistor. When a positive voltage is applied to the gate, the transistor is “on”, allowing current to flow from the source to the drain. Conversely, when the voltage applied to the gate is negative, the transistor is “off”, preventing current from flowing from the source to the drain. The amount of voltage applied to the gate controls the amount of current flowing through the transistor. This allows the user to control the amount of current that is allowed to flow through the device at any given moment.

In addition to its main application as a switch and regulator in DC power supplies, the IRL3502STRLPBF can also be used as a power amplifier. It can also be used as an amplifying transistor in analog circuits, providing amplifying gain and low noise levels. Additionally, in digital circuits, the IRL3502STRLPBF can be used as a logical element, acting as a switch or multiplexer to connect different parts of the circuit.

In summary, the IRL3502STRLPBF is a vertical power FET that is specifically designed to address the needs of very low voltage and low power applications. Its dual-metal structure includes a high performance lateral P-channel MOSFET and passively integrated Schottky diode. It is commonly used in systems that require the regulated control of DC power supplies, as well as in amplifying and logical elements in both analog and digital circuits.

The specific data is subject to PDF, and the above content is for reference

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