IRL3803 Allicdata Electronics
Allicdata Part #:

IRL3803-ND

Manufacturer Part#:

IRL3803

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 140A TO-220AB
More Detail: N-Channel 30V 140A (Tc) 200W (Tc) Through Hole TO-...
DataSheet: IRL3803 datasheetIRL3803 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 6 mOhm @ 71A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
FET Feature: --
Power Dissipation (Max): 200W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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The IRL3803 is a very powerful type of field effect transistor (FET) that is part of a large family of MOSFETs, operating within a single electronic circuit.

These transistors are commonly used for motor control, power conversion, and other applications in which high-performance, high-frequency switching is required. The IRL3803\'s expansive conversion and utilization capabilities have enabled it to become an extremely versatile yet reliable component for many electronics applications.

Specifically, the IRL3803 is an N-channel, HEXFET power MOSFET, which offers an extraordinarily low on-state resistance of 30 milliohms and includes integrated protection for both overcurrent and thermal protection.

Unlike other FETs, the IRL3803 is capable of maintaining extremely low off-state currents, thus resulting in substantial power savings in a wide variety of applications. Moreover, the integrated protection technology built into the device enables it to handle even short circuit conditions safely.

The IRL3803 provides very high efficiency of around 90%, thanks to its low on-state resistance, which keeps power losses to a minimum. Additionally, this particular type of MOSFET exhibits excellent dielectric breakdown voltage and high-temperature operation, making it suitable for a wide range of applications.

Given the potential applications of the IRL3803, it is especially useful in the design of power electronics, such as BLDC motor controllers, DC-DC converters, and power amplifiers. In motor control systems, for example, the IRL3803 can be used to create efficient, high-performance control systems for motor speed and torque control. Similarly, for DC-DC converters, the FET can be used to provide efficient conversion of DC power from one voltage to another. Additionally, owing to the low gate-source capacitance, the IRL3803 is also well suited for power amplifier designs.

In terms of its working principle, the IRL3803 is an N-channel MOSFET which uses an insulated gate in order to control the flow of current through the drain and source regions. The gate terminal can either be connected to ground, or to a positive voltage. When a positive voltage is applied to the gate terminal, it reduces the resistance between the drain and the source, creating a path for current to flow. When the voltage is removed from the gate, the resistance between the drain and the source increases, effectively halting current flow.

This characteristic is what makes the IRL3803 so effective in motor control, power conversion and other applications, as it provides users with an easy and efficient way of controlling the current through a circuit. In addition, its low switching losses, low thermal resistance and fast switching times make it a great candidate for power amplification and high frequency switching.

Overall, the IRL3803 remains one of the most powerful and versatile FETs available today. Its high performance, low on-state resistance and integrated protection technology make it suitable for various applications such as motor control, power conversion and power amplification. Additionally, thanks to its low gate-source capacitance, it can also be used for high frequency switching.

The specific data is subject to PDF, and the above content is for reference

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