IRL3803STRL

Series:	HEXFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	6 mOhm @ 71A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	140nC @ 4.5V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	5000pF @ 25V
FET Feature:	--
Power Dissipation (Max):	3.8W (Ta), 200W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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IRL3803STRL is a type of single N-channel logic enhancement mode power field effect transistor (FET) transistor, belonging to the Infineon Technologies family. It is designed for use in switch-mode power supply (SMPS) applications and its key parameters are source to drain breakdown voltage, on resistance and gate charge.The IRL3803STRL is used as a switching transistor in SMPS circuit designs, where it offers improved efficiency and power handling compared to conventional bipolar transistors. It can be used to control a power supply\'s load current and input current, and is suitable for use in switched DC-DC converters. It is also used in other circuits such as H-bridges, radio frequency (RF) amplifiers, and current regulators.The IRL3803STRL is a relatively small transistor, measuring 10.9mm x 8.4mm x 4.4mm and weighing about 0.4g. It is composed of two N-channel MOSFETs formed by a source (S), a drain (D), and a gate (G). It operates in both enhancement and logic level modes, with the logic level mode enabled by a negative gate voltage.The IRL3803STRL is capable of operating at high frequencies up to 200MHz, and is used in switch-mode power supplies up to 300W. It has a very low on-state resistance (RDS(on)) of 0.15 milliohm (m) typical, and a relatively high maximum drain current rating of 150mA. It also has a maximum drain-source breakdown voltage (BVDSS) of 30V and a maximum gate-source voltage (VGS) rating of +/-20V.When working in the enhancement mode, the IRL3803STRL is switched on by applying a positive gate voltage (VGS). This causes current to flow from the source to the drain through the transistor\'s N-channel, allowing the output voltage (Vout) to increase from VSS to VDD. This can be done with either an external power supply or an integrated circuit (IC) based control such as a pulse width modulation (PWM) controller.In logic level mode, however, a negative gate voltage (VGS) is required to switch the IRL3803STRL on, which allows for a wide range of operating voltages. This makes the IRL3803STRL ideal for using with lower voltage, lower power microcontrollers.The working principle of the IRL3803STRL is relatively simple and is based on the basic principles of FET transistors. The N-channel MOSFET consists of a channel of conduction material that is connected between the source and drain. When a voltage is applied to the gate, it creates an electric field across the channel which modulates the current flow from source to drain.In summary, the IRL3803STRL is a single N-channel logic enhancement mode power field effect transistor designed for use in SMPS applications. It offers improved efficiency and power handling when compared to conventional bipolar transistors and is capable of operating at high frequencies up to 200MHz. It has a very low on-state resistance and a relatively high maximum drain current rating. It is also easy to use, with a simple working principle based on the basics of FET transistors.

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