IRL3716STRLPBF

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The IRL3716STRLPBF is a 100V/2A/15mOhm as a single N-Channel enhancement mode HEXFET MOSFET transistor from International Rectifiers sSuperMESH™ power MOSFET series. This transistor is a planar MOSFET device with a low figure of merit, RDS(on)/Qg. The IRL3716STRLPBF consists of the N-Channel MOSFET which operates with a drain source voltage (VDS) up to 100V with a Drain source current (ID) of 2A, low RDS(on) of 15mOhm and a maximum drain source on-resistance (RDS(on)) of 7.2 mOhm at VGS = 4.5V. This device characteristics makes it an ideal fit for switching and power conversion applications, such as battery management, high-efficiency power supplies, hard switching, bridge rectifiers, battery chargers, DC-DC converters and other applications.

The IRL3716STRLPBF is a voltage-controlled, depletion mode transistor that operates under a toggling mechanism. The device is mainly used as a switch transistor where it turns on or off as a function of the voltage applied on the gate. This voltage required to turn ON or OFF the transistor varies with the device technology and the application requirements. Generally, the ON voltage (VGS(on)) of the device is 5V, the OFF voltage (VGS(off)) is 0.3V and the threshold voltage (VGS(th)) is 4V. The turn ON and turn OFF time of the device is determined by the time it takes to charge and discharge the capacitance between the gate and the source of the device.

The typical application circuit of the IRL3716STRLPBF is shown in Figure 1. The device consists of an applied source resistor (RS), an applied drain resistor (RD), a supply voltage (Vin) and gate voltage (VGS). The device works as a switch and connects the drain and source when it is turned ON and disconnects them when it is turned OFF. When the device is OFF, the gate voltage (VGS) is lower than the threshold voltage (VGS(th)). As the gate voltage rises, the charge carriers within the device increases, reducing the resistance and turning ON the device. However, if the voltage applied to the gate (VGS) is greater than the OFF voltage (VGS(off)), the device turns OFF.

The IRL3716STRLPBF has a high-speed capacity due to its short channel, low gate charge, low output capacitance and low ON resistance. This makes it a suitable choice for high-frequency switching applications and power supplies. The device also provides good input to output differential voltage (Vout - Vin) while still maintaining its safe operating area. The package has a low profile design and is easy to solder and mount. Furthermore, it is RoHS-compliant and is capable of operating at a temperature range of -55°C to 150°C.

The IRL3716STRLPBF is an ideal device for applications in the automotive, consumer, medical and industrial markets. This device is suitable for use in Power circuits and switching applications, such as DC-DC converters, hard switching, bridge rectifiers and battery chargers that require a high-speed device. The combination of its high-speed switching and low RDS(on) makes it a reliable and efficient solution for increasing power efficiency in a wide range of applications. Furthermore, this device is also well-suited for use in mobile devices where its low gate charge and package offer a great combination of performance and miniaturization.

In conclusion, the IRL3716STRLPBF is an innovative single N-Channel enhancement mode HEXFET MOSFET that is well-suited for switching and power conversion applications. This device provides a great combination of high-speed switching, low RDS(on), low gate charge and low-profile package that makes it perfect for a wide range of automotive, consumer, medical and industrial applications.

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