IRL3303S Allicdata Electronics
Allicdata Part #:

IRL3303S-ND

Manufacturer Part#:

IRL3303S

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 38A D2PAK
More Detail: N-Channel 30V 38A (Tc) 3.8W (Ta), 68W (Tc) Surface...
DataSheet: IRL3303S datasheetIRL3303S Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: HEXFET®
Packaging: Tube 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Vgs (Max): ±16V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
FET Feature: --
Power Dissipation (Max): 3.8W (Ta), 68W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Description

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The IRL3303S is a high-performance, single surface-mount 14IPM power MOSFET designed for high current applications. Ideal for both synchronous rectification and hard-switching, this device is available in both through-hole and surface mount packages. It is a versatile, high-frequency, low-loss device and is suitable for applications requiring wide temperature ranges and high temperature cycling.

The IRL3303S is a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) with high current handling capacity, low on-state resistance and a wide range of operating temperatures. It is commonly used in power electronics applications such as power supplies and DC/AC converters.

A MOSFET is an active semiconductor device consisting of a channel of n-doped semiconductor material, which is formed either between a source and a drain, or between a source and a body. It is the most commonly used type of FET (Field Effect Transistor), and has a variety of applications due to its high switching speed, low power consumption, and low on-state resistance.

The main advantage of a MOSFET is its low input impedance and low voltage drop over its respective on-state resistance. Its solid-state construction also makes it more reliable than mechanical solutions such as relays and switches. This makes it the ideal choice for applications requiring high current, such as those requiring synchronous rectification and other high-frequency switching.

In addition, the IRL3303S has a number of features which make it particularly suitable for high current applications. These features include a maximum continuous current rating of 14IPM, a low on-state resistance of 0.7 ohms, a maximum on-state voltage drop of 0.45V, and a maximum power dissipation of 25 watts. It is also available in both through-hole and surface mount packages, making it suitable for a variety of different design requirements.

The IRL3303S is capable of operating at temperatures up to 175°C, making it suitable for a wide range of temperature cycling requirements. It also features built-in protection mechanisms such as N-channel ESD protection and an overvoltage protection system (OVPS) to protect the device from damage in the event of an overvoltage event.

The IRL3303S is primarily used in applications requiring high-current carrying capacity and low on-state resistance. It is commonly used in power supply and DC/AC converter applications, as well as in various other high-frequency switching applications. It is also suitable for use in solar energy systems, battery management systems, electric vehicle charging systems, industrial motor drives, and DC/AC inverter applications.

In summary, the IRL3303S is a versatile, high-frequency, low-loss single surface-mount 14IPM power MOSFET designed for high current applications. Its wide range of features make it suitable for a variety of different design requirements, and it is a reliable, low-cost solution for applications requiring high current.

The specific data is subject to PDF, and the above content is for reference

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