Allicdata Part #: | IRL3705NS-ND |
Manufacturer Part#: |
IRL3705NS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 89A D2PAK |
More Detail: | N-Channel 55V 89A (Tc) 3.8W (Ta), 170W (Tc) Surfac... |
DataSheet: | IRL3705NS Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 89A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 170W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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The IRL3705NS is a giant 60V single N-channel enhancement mode Field-Effect Transistor (FET) manufactured by International Rectifier using its advanced high density trench MOSFET technology. It is an interesting and useful component for various applications such as DC/DC converters, motor drives, and various power management tasks. The IRL3705NS has a maximum drain current of 120A (at 25°C), a drain source on-resistance of 13 milliohms (maximum) and a gate-source voltage range of -10 to +20 volts. It has a wide operational temperature range, from -55°C to +175°C, and comes in a rugged and thermally efficient thermoplastic PowerPAK 1212-8 package.
One of the main advantages of the IRL3705NS is its extremely low gate-source input capacitance (Cgs) of 12.5pF, which provides an efficient and high-performance power switching solution. Its low input capacitance also means that it is relatively easy to drive and can be used in a wide variety of applications. This flexibility in terms of applications makes it perfect for a range of DC/DC converters, motor drives, power management circuits, and other voltage and current related applications.
The IRL3705N\'s working principle is based on the MOSFET gate capacitance control phenomenon. Since it is an enhancement mode device, it can be activated by setting the gate voltage above the threshold voltage. This causes the internal gate to source capacitance (CGS) to increase, which in turn causes a current to flow from the gate to the source. This current will then travel through the MOSFET channel from the source to the drain, providing a voltage drop proportional to the current. This is how the IRL3705N operates.
In addition to its impressive current and voltage capabilities, the IRL3705NS is also pretty energy efficient. Thanks to its advanced high density trench technology, it offers ultra low gate charge losses and is especially designed for high frequency switching applications. Because of its low input capacitance and high frequency switching ability, it makes an excellent choice for high power switching applications.
In terms of applications, the IRL3705NS is suitable for a wide range of applications such as DC/DC converters, motor drives, inverters, class-D audio amplifiers, high power RF amplifiers and many other high speed switching applications. It is also well suited for power management circuits in laptops, computers, mobile devices and other digital systems. Furthermore, its high current capabilities and wide temperature range make it a great choice for high power LED lighting systems and industrial motor drives.
In conclusion, the IRL3705NS is a high performance, energy efficient, and versatile single N-channel MOSFET. Its impressive current and voltage capabilities, low input capacitance, and impressive energy efficiency make it a great choice for applications such as DC/DC converters, motor drives, high power switching, power management circuits, and industrial motor drives. It is an effective and reliable solution for a variety of high power applications.
The specific data is subject to PDF, and the above content is for reference
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IRL3103D1S | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 64A D2PAK... |
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IRL3502S | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 110A D2PA... |
IRL3102 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 20V 61A TO-22... |
IRL3102S | Infineon Tec... | -- | 1000 | MOSFET N-CH 20V 61A D2PAK... |
IRL3103L | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 64A TO-26... |
IRL3103STRL | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 30V 64A D2PAK... |
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IRL3705NS | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 89A D2PAK... |
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