Allicdata Part #: | IRL3302L-ND |
Manufacturer Part#: |
IRL3302L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 39A TO-262 |
More Detail: | N-Channel 20V 39A (Tc) 57W (Tc) Through Hole TO-26... |
DataSheet: | IRL3302L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Discontinued at Digi-Key |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 7V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 23A, 7V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 4.5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 57W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262-3 |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
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The IRL3302L is a high-performance, high-efficiency, low-threshold MOSFET used in power electronics. It offers excellent switching performance and low losses. The IRL3302L is a single-gate, N-channel MOSFET with a 20-volt breakdown voltage, 2-ampere continuous drain current, and a maximum gate-source voltage of 20 volts. The device is well suited for load switches, large-voltage regulator applications, and DC-DC converters.
The IRL3302L is based on an advanced lateral MOSFET technology, which uses a Superjunction structure to reduce on-resistance and improve power efficiency. The IRL3302L also has an optimized power MOSFET structure that reduces both input capacitance and gate resistance while also increasing switching speed.
The IRL3302L\'s superior power performance permits a dedicated use in various applications. Its low on-resistance and low gate charge(Qg) allow for high saturation current and low conduction loss. The excellent dV/dt characteristics make the IRL3302L suitable for applications with fast switching times, such as DC-DC converters.
The IRL3302L is also designed for efficiency optimization in order to achieve higher power density. Its low gate charge rating, high-current capability, and low reverse transfer capacitance all contribute to improved overall efficiency when used in power electronics. Additionally, because it is an N-channel MOSFET, it eliminates the need for an additional level shifter, reducing overall power consumption.
The IRL3302L MOSFET also has excellent thermal characteristics. Its high thermal conductivity and low thermal resistance, combined with its low power consumption, make it ideal for applications requiring high-temperature operation, such as automotive applications.
In addition to its superior performance, the IRL3302L also has very low gate threshold voltage, which is important in applications where energy losses due to temperature variations need to be minimized. Additionally, the device has excellent dV/dt capabilities and a low Miller capacitance, making it suitable for high-speed switching applications. Additionally, the IRL3302L has excellent noise immunity, allowing it to be used in high-noise environments without any risk of electrical interference.
Overall, the IRL3302L is an excellent choice for power electronic applications demanding low losses, high switching speed, low noise, and improved efficiency. Its excellent performance and low cost make it a great choice for automotive and other power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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