IRL3302PBF

Vgs(th) (Max) @ Id:	700mV @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	57W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 15V
Vgs (Max):	±10V
Gate Charge (Qg) (Max) @ Vgs:	31nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	20 mOhm @ 23A, 7V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 7V
Current - Continuous Drain (Id) @ 25°C:	39A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The IRL3302PBF is a single N-channel, 40V, Power MOSFET that is designed and characterized to offer improved rDS(ON) and gradual over-current protection during overload conditions. This MOSFET is part of the International Rectifier\'s DirectFET power MOSFET family and is able to provide superior power density, low on-resistance, superior temperature behavior, and superior gate charge properties. It is ideal for DC-DC conversion in a wide range of applications including laptop, servers, set top boxes (STB), game consoles, and net book applications. This paper will discuss the applications and working principles of the IRL3302PBF.

Applications of the IRL3302PBF

The IRL3302PBF has a variety of applications. It can be used in DC/DC converters for power management and voltage regulation. Its low on-resistance combined with its fast switching speed allows for efficient and accurate conversion of voltages. It is also used in power supplies and voltage switchmode applications such as notebook computers and peripheral devices. Additionally, it is used in many amplifier circuits and in the commutation of AC to DC power.The IRL3302PBF is used in CPUs and ASICs in order to provide logic level and high current switching. It has the capability of switching high side and low side loads and has a high current carrying capacity of up to 20A. It is also used in solar and LED lighting applications due to its ability to efficiently regulate current, reduce power consumption, and reduce component size.

Working Principle of the IRL3302PBF

The IRL3302PBF is a N-channel MOSFET, which means that it is comprised of a channel of semiconductor material between two conductors, or source and drain. When a voltage is applied to the gate of the MOSFET, current is allowed to flow from the drain to the source. When the voltage is removed, the current is cut off.This MOSFET is designed with a low rDS(ON) and gradual over-current protection during over-load conditions. The rDS(ON) determines the on-resistance of the MOSFET, which is the resistance between the source and the drain when the MOSFET is in the "on" state. This low on-resistance allows for efficient power conversion and high currents to be passed through the MOSFET. In addition, the gradual over-current protection will limit the amount of current that can flow through the device during overload conditions, protecting the circuit from potentially disastrous results.

Conclusion

The IRL3302PBF is a single N-Channel power MOSFET, optimized to have low rDS(ON) and gradual over-current protection. This MOSFET can be used in a variety of DC/DC conversion and power supply applications such as notebook computers, CPUs, and LED lighting. The low on-resistance and gradual over-current protection provides efficient and accurate voltage conversion, low power consumption, and circuit protection.

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