Allicdata Part #: | IRL3302STRR-ND |
Manufacturer Part#: |
IRL3302STRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 39A D2PAK |
More Detail: | N-Channel 20V 39A (Tc) 57W (Tc) Surface Mount D2PA... |
DataSheet: | IRL3302STRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 15V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 23A, 7V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 7V |
Current - Continuous Drain (Id) @ 25°C: | 39A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL3302STRR is an enhancement mode, Logic Level N-Channel Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This device is commonly used in high power applications such as audio amplifiers, high voltage switching, vehicle applications, and power supplies. It features a low gate threshold voltage, low on-resistance, and high blocking voltage, making it an excellent choice for power design.
The IRL3302STRR is a logic level MOSFET, meaning it does not require an external logic level shifter to switch it on and off. This makes it extremely easy to integrate into existing circuit designs, which can be important for designs with high currents. The device has an insulation temperature rating of 175°C, meaning it can be used in environments where high temperatures can be encountered. Additionally, the device offers low gate charge, making it ideal for applications that need fast switching speeds.
The IRL3302STRR is composed of three terminals that are connected to the drain, gate, and source. The drain is the primary connection point for the majority of power to flow, while the gate is used to switch the MOSFET on or off. The source is connected to the circuit ground in order to ensure the current flows correctly. The transconductance of the device is dependent on the gate to source voltage, commonly referred to as Vgs. This terminates the amount of current that flows between the source and drain when the MOSFET is on. The maximum drain-source on-resistance is determined by the current level and drain-source voltage, also referred to as the Rds(on) value.
When used in the switching application, the IRL3302STRR turns on when a positive voltage (Vgs) is applied to the gate. This causes current to flow from the drain to the source, turning on the MOSFET. When the voltage is removed, the MOSFET will turn off. This makes it perfect for momentary or pulsed applications that require instantaneous power on or off.
The switching performance of this device is further enhanced by its fast switching response time. Typical switch transition times between on and off are less than a millisecond, making the IRL3302STRR ideal for high power applications that require fast switching. Additionally, the device can handle up to 95A of continuous drain current and up to 22A of peak pulsed current.
In high voltage applications, the IRL3302STRR offers an impressive blocking voltage of up to 800V. This allows it to be used in applications such as high voltage power supplies and motor controls, where a high voltage component is required. The pulse width modulation capability of the IRL3302STRR makes it well suited for controlling motor or fan speeds, as well as other applications requiring pulse modulation.
Overall, the IRL3302STRR is one of the most versatile power MOSFETs available, able to handle high power, high voltage, and high frequency applications. Its low gate charge, low on-resistance, and low threshold voltage make the IRL3302STRR the perfect choice for many applications. It is designed for reliable performance and maximum efficiency, making it an excellent choice for any power design.
The specific data is subject to PDF, and the above content is for reference
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