| Allicdata Part #: | IRL3303LPBF-ND |
| Manufacturer Part#: |
IRL3303LPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 38A TO-262 |
| More Detail: | N-Channel 30V 38A (Tc) 3.8W (Ta), 68W (Tc) Through... |
| DataSheet: | IRL3303LPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 68W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
| Vgs (Max): | ±16V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 26 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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An Infineon IRL3303LPBF is a 3 amp, 30 V N-Channel HexFET Power MOSFET from Infineon Technologies AG. It is a high voltage, low rDS (on) transistor that can be used in a variety of applications. The IRL3303LPBF has an improved gate charge x RDS(on) product compared to other transistors of its type, thereby providing reduced conduction losses and higher efficiency. It is popular in DC-DC converters, load switching and battery protection.
The IRL3303LPBF is constructed with a Multi-EPITrench technology and features a low gate threshold voltage and low input capacitance. Its fast switching capability and high current capabilities make it suitable for high performance and fast switching applications. Its low on-resistance and ruggedness make it ideal for automotive applications as well as high power industrial applications. The operating temperature for this particular type of MOSFET ranges from -55 degrees Celsius to 150 degrees Celsius.
When discussing the application field and working principle of the IRL3303LPBF, it is important to first understand what a MOSFET is. MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor and is a type of field effect transistor. It has an insulated gate, which separates bulk n-type and p-type semiconductor regions, which then act as the transistor’s source and drain. When a voltage is applied to the gate, it creates an electric field which modulates the conductivity of the source-drain region and enables current to flow. The current flow is controlled by the voltage applied to the gate and this is why it is known as a field effect transistor.
The IRL3303LPBF is a N-Channel MOSFET, which means it uses n-type semiconductor regions, instead of p-type. The n-type regions are formed by a p-type substrate and then a specific dopant is used to create n-type regions. As with all MOSFETs, the IRL3303LPBF is electrically switchable and can be either on or off. When it is off, the gate has 0V applied to it and all current stops flowing through the source and drain. When it is on, a gate voltage is applied and then current can flow between the source and drain.
One of the primary applications of the IRL3303LPBF is DC-DC converters. In the most basic form, a DC-DC converter is used to convert a given voltage to another voltage, usually lower than the given voltage. A common application for this would be to power a circuit from an external power source, such as a battery. This can be done by connecting the IRL3303LPBF to the external power source, with one side of the transistor connected to the positive side of the battery and the other side connected to ground. When the voltage applied to the gate of the transistor is above a certain threshold, current will flow from the positive side of the battery to the ground side of the battery, thus providing power to the circuit.
The IRL3303LPBF can also be used in load switching applications. This involves connecting the transistor to a given load, such as a motor or light. When a voltage is applied to the gate of the transistor, current will flow from the source to the drain and then to the load, thus turning on the load. This can be used to control the speed of a motor, the brightness of a light, etc.
Finally, the IRL3303LPBF can also be used for battery protection. This involves connecting the transistor to the battery and then using a control circuit to monitor the voltage on the battery. When the voltage drops below a certain level, the control circuit will then activate the transistor which will then cut off the current to the battery. This prevents damage to the battery and also can help to prevent unexpected operation of the device which might be connected to the battery.
The IRL3303LPBF is a high voltage, low rDS (on) N-Channel HexFET Power MOSFET from Infineon Technologies AG. It is widely used in applications such as DC-DC converters, load switching, and battery protection due to its low on-resistance and ruggedness. It is well-suited for high performance and fast switching applications, and its operating temperature range extends from -55 degrees Celsius to 150 degrees Celsius. The IRL3303LPBF is a great choice for many applications and its performance and reliability make it a popular choice.
The specific data is subject to PDF, and the above content is for reference
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IRL3303LPBF Datasheet/PDF