Allicdata Part #: | IRL3705NSTRR-ND |
Manufacturer Part#: |
IRL3705NSTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 89A D2PAK |
More Detail: | N-Channel 55V 89A (Tc) 3.8W (Ta), 170W (Tc) Surfac... |
DataSheet: | IRL3705NSTRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3600pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 98nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 46A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 89A (Tc) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL3705NSTRR is a type of Field Effect Transistor (FET). It is a voltage-controlled device that works by controlling the current through the gate. This particular FET is based on a single MOSFET technology and is ideally suited for use in power-management applications. In this article, we will discuss the application field and working principle of the IRL3705NSTRR.
The IRL3705NSTRR is a MOSFET that is designed as an integrated circuit package. It is designed to provide a low specific on-resistance and high switching speeds, making it suitable for use in various power-management applications. It can be used for controlling high currents and switching power loads in automotive and industrial applications. It is also suitable for use in high-power motor-control applications.
The IRL3705NSTRR is a n-channel MOSFET that utilizes a insulated-gate field-effect transistor (IGFET) structure. The FET is a voltage-controlled device that works by controlling the current through the gate. The gate voltage, which is applied to the FET, controls the channel width and the conducting state of the channel. The channel width limit is determined by the applied voltage which then affects the amount of current that can be passed through the gate.
The IRL3705NSTRR features a low threshold voltage which allows it to be operated at a wide range of voltages. At low gate voltage, the channel resistance is held constant. However, at higher gate voltages, the threshold voltage-controlled transistor can be switched on and off. It can also be operated in linear and saturated modes, depending on the application. Its low on-resistance ensures low power dissipation and high efficiency when driven with a constant source voltage.
The IRL3705NSTRR has a unique feature of Negative Temperature Coefficient (NTC) which helps to reduce power dissipation and device temperature during operations. This thermal protection prevents the FET from being damaged due to excessive heat. It also helps to improve switching efficiency by avoiding thermal runaway. The lower power consumption and improved thermal management also helps to extend device life and reduce production costs.
The IRL3705NSTRR is ideal for power management applications, where it can be used as a switch to control high current loads or as a driver for high powered motors. It is also highly reliable, with a maximum current rating of 100A and a breakdown voltage of 75V. It is a rugged structure, operating temperature range of -40 to +125°C, and is designed for high reliability.
In conclusion, the IRL3705NSTRR is a single MOSFET which is ideal for use in power-management applications. It has a low on-resistance, high switching speeds and offers a unique Negative Temperature Coefficient (NTC) feature for improved power efficiency and thermal management. It is a strong and reliable device, with a maximum current rating of 100A and a breakdown voltage of 75V, making it suitable for use in various automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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