Allicdata Part #: | IRL3714ZPBF-ND |
Manufacturer Part#: |
IRL3714ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 36A TO-220AB |
More Detail: | N-Channel 20V 36A (Tc) 35W (Tc) Through Hole TO-22... |
DataSheet: | IRL3714ZPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.2nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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Among the wide range of FETs (field-effect transistors) available on the market, IRL3714ZPBF stands out as a high-performance solution. This single MOSFET is employed for a variety of applications, mostly to control current in one direction and to switch voltages in the range of 0V to 100V. As the transistor’s voltage rating is 54V, it can be used in both power applications and switch overloads.
The IRL3714ZPBF is a metal-oxide semiconductor transistor (MOSFET), an insulated gate device that combines the advantages of a low operating voltage and high current rating for number of applications. It is often used to control current in one direction and to switch voltages between 0-100V.
This device is characterized by a low drain-source on-state resistance, which makes it suitable for very high-current applications and allows a higher rate of power efficiency when used in the appropriate way. The body and gate dielectric material is designed to provide superior robustness while operating in high temperatures and voltages.
The maximum power is 30W, and the device is rated for a temperature range of -55 to 150 degrees Celsius. Power dissipation is a key factor in the success of this device. The dissipation is controlled over the entire range of operating temperatures and voltages, ensuring that it will perform as desired no matter how much heat the system generates.
The IRL3714ZPBF works by having a gate electrode which is connected to the gate source. By controlling the voltage of the gate electrode, the current flow through the device can be regulated. This can then be used to provide various services in the application, depending on the needs of the system.
The transistor is also provided with a Schottky diode protection which increases the operational reliability and immunity of the device to transients and noise. A low-voltage endstop circuit is also provided, allowing the device to be employed in low-voltage applications.
The device can be employed in many different applications, such as digital logic gates, DC motor control, LED lighting, power Converters and motor controls. Its high current rating, low on-state resistance, low-voltage endstop, low power dissipation, and noise immunity make it ideal for nearly any application.
Overall, the IRL3714ZPBF is a highly capable single MOSFET device with a wide range of possible applications and a low on-state resistance that allows for efficient use in high-current operations. It features a temperature range which is designed to tolerate high levels of heat during operation. Its robust Schottky diode protection, low-voltage endstop circuit and low power dissipation further enhance its capabilities and suitability for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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