Allicdata Part #: | IRL3714ZS-ND |
Manufacturer Part#: |
IRL3714ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 36A D2PAK |
More Detail: | N-Channel 20V 36A (Tc) 35W (Tc) Surface Mount D2PA... |
DataSheet: | IRL3714ZS Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.55V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 550pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 7.2nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 16 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL3714ZS is a single N-Channel MOSFET that is used in a variety of applications. It has a drain-source breakdown of 60 Volts, an RDS(ON) (on-state resistance) at 25°C of 14 milliOhms, and a maximum current rating of 24 amperes. This product, from International Rectifier, is voltage-sensitive and has a wide range of applications including switching, amplifying and voltage regulation.
The IRL3714ZS device is made up of four logic insulated-gate bipolar transistors (IGBT) connected in parallel. The IGBTs are connected to the drain, source, and gate through the source-drain (SD) lines. Each IGBT is composed of a source, a drain, and a control gate. The source and drain of each IGBT are connected to a particular output connection. The IRL3714ZS has a latch-up immunity of 100V and an avalanche energy tolerance of 8J.
The operation principle of IRL3714ZS is based on semiconductor physics. When an electric field is applied to the drain, the electric field causes electrons to move from the source to the drain. This electron flow between the source and the drain creates an electric current in the channel. The amount of current that can flow through the MOSFET is controlled by the gate-source voltage applied to the device. The higher the gate voltage, the higher the drain current.
As an N-channel MOSFET, the IRL3714ZS device is especially well-suited for applications that require low on-state resistance and high switching speed. Typical application areas include DC/DC converters, ripple detectors, load switching and protection circuits, motor driver circuits and power supplies.
The IRL3714ZS is a versatile device, and can be used in a wide range of applications. It is suitable for use in high temperature environments and can be used in applications requiring high switching speeds. It is also suitable for use in low-noise applications, due to its internal filtering of noise spikes.
In summary, the IRL3714ZS N-Channel MOSFET is a reliable and efficient device that is suitable for a variety of applications. It has a low on-state resistance, a wide range of operating temperatures, and high switching speed, making it an ideal solution for many applications requiring power switches. Its internal noise filtering also means it can be used in low-noise applications. As such, the IRL3714ZS is a reliable device for power management applications.
The specific data is subject to PDF, and the above content is for reference
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