Allicdata Part #: | IRL3715LPBF-ND |
Manufacturer Part#: |
IRL3715LPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 54A TO-262 |
More Detail: | N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Through... |
DataSheet: | IRL3715LPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRL3715LPBF transistor is a type of power MOSFET that is used in a wide range of applications. This type of transistor is typically used for power management applications in industrial and consumer applications. The IRL3715LPBF is an enhancement mode N-channel MOSFET and is specifically designed for high current, low on-resistance, high speed switching, and fast gate transitions.
The IRL3715LPBF transistor has a gate-source voltage (Vgs) range of 4.5 V to 5 V and a drain-source voltage (Vds) range of 20 V to 60 V. It has a current rating of 60A and a power dissipation of 399 W at a temperature range of -55°C to 175°C.
The IRL3715LPBF transistor is particularly useful in power applications where a high level of current needs to be managed efficiently, such as in switching power supplies, motor drives, and other power-management applications. This transistor is also useful in audio amplifiers, HF/VHF amplifiers, Static RAM, and other applications where a fast and efficient transistor is required.
The working principle of the IRL3715LPBF transistor is based on the basic principles of MOSFETs. It works on the principle of the channel resistance and carrier injection. The device is basically a three-terminal device with a source, a drain, and a gate terminal. The gate terminal controls the conductivity of the channel between the source and the drain. When a positive voltage is applied to the gate terminal, it creates an electric field that generates an inversion layer in the channel between the source and the drain. This causes the channel to become conducting, allowing current to flow from the source to the drain.
The IRL3715LPBF transistor is a high-power device, so it is important to pay attention to the power ratings and temperature ratings when using it. The device also needs to be correctly biased for the desired application, as the temperature range and power ratings depend on the bias voltage. It is also important to take into account the capacitance of the device and its gate charge, and to make sure that the device is properly heat-sinked and cooled in high-power applications.
In summary, the IRL3715LPBF is an N-channel enhancement-mode MOSFET that is used in a wide variety of industrial and consumer applications. It has a high current rating and low on-resistance, allowing it to be used in applications that require efficient current flow. The transistor works on the principle of the channel resistance and carrier injection, with the gate terminal controlling the flow of current. The device needs to be correctly biased and heat-sinked for optimal performance, and the power ratings and temperature range need to be taken into account when using this device. In this way, it can be used safely and efficiently in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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