Allicdata Part #: | IRL3715STRL-ND |
Manufacturer Part#: |
IRL3715STRL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 54A D2PAK |
More Detail: | N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Surface... |
DataSheet: | IRL3715STRL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL3715STRL is a single high-density direct-FET power MOSFET transistor. It is a N-channel MOSFET designed for high current, low on-resistance, and low gate charge for devices ranging from 25V to 100V. This transistor has an enhanced body diode, which is designed for minimal EMI and low power dissipation. The IRL3715STRL is also suitable for a wide range of applications such as switching, audio, video, and gaming. This article will focus on the application field and working principle of the IRL3715STRL.
Application Field
The IRL3715STRL is specifically designed for high current switching applications. It is especially well suited for computer peripherals that require high-current switches, such as optical and mechanical switches, as well as other audio and video equipment. This transistor is also suitable for use in a wide variety of high-voltage DC/DC converters, such as those found in home theaters and gaming systems. In addition, the IRL3715STRL is also suitable for automotive applications, including high-current circuits for power supply systems and other energy-saving applications.
Working Principle
The IRL3715STRL is a N-channel MOSFET, which means it operates according to the principle of field-effect transistor. The gate of the transistor is a reverse biased P-N junction, which forms a depletion region (or gate region) in the semiconductor material. When a positive voltage is applied to the gate, the gate region becomes less depleted and the transistor becomes “turned on”, allowing current to flow between the source and drain. Conversely, when a negative voltage is applied to the gate, the gate region is depleted and the transistor becomes “turned off” and no current can flow between the source and drain.
The IRL3715STRL is a direct-FET power MOSFET, which means it has a low gate charge and low on-resistance. The IRL3715STRL is designed to minimize EMI and power dissipation, and its body diode is also optimized for high current switching applications. It also features a boost-voltage protection system, which helps protect the transistor from damage caused by over-voltage or over-current situations.
Conclusion
The IRL3715STRL is a single high-density direct-FET power MOSFET transistor designed for high current, low on-resistance, and low gate charge applications. It is suitable for a wide range of applications, including switching, audio and video, and automotive applications. The IRL3715STRL operates according to the principle of field-effect transistor, and its body diode is optimized for high current switching applications. The transistor also features a boost-voltage protection system to protect the device from damage caused by over-voltage or over-current situations.
The specific data is subject to PDF, and the above content is for reference
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