Allicdata Part #: | IRL3715TR-ND |
Manufacturer Part#: |
IRL3715TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 54A TO-220AB |
More Detail: | N-Channel 20V 54A (Tc) 3.8W (Ta), 71W (Tc) Through... |
DataSheet: | IRL3715TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Power Dissipation (Max): | 3.8W (Ta), 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1060pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 26A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 54A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRL3715TR is an advanced Insulated Gate Bipolar Transistor (IGBT) technology developed specifically for automotive applications. The IRL3715TR offers low conduction and switching losses, extended temperature range and great flexibility for system design.
IGBTs are four-layer, three-terminal power semiconductor devices that are the essential components in the development of pulse-width modulation (PWM) or pulse frequency modulation (PFM) for controlling higher-power circuits. The IRL3715TR feature a wide dynamic performance range, as well as a high level of ruggedness and reliability. IRL3715TR are primarily used in automotive applications such as electrical power steering motors, air conditioning compressor clutch, low voltage engine control modules, vehicle speed control applications, and exhaust gas recirculation (EGR) systems.
The IRL3715TR use the latest advanced IGBT technology to provide excellent AC characteristics and thermal performance. The IRL3715TR feature an embedded fast body diode, which offers improved high-frequency operation with ultra-low reverse recovery current and superior thermal performance. The device enables high current, high switching-speed operation with minimal losses.
The IRL3715TR also utilizes advanced anti-parallel N-channel MOSFETs integrated on the same die to reduce conduction losses. The IRL3715TR are excellent devices for power conversion applications. The IRL3715TR offer superior dynamic characteristics and thermal performance in automotive environments.
The IRL3715TR are single-channel MOSFETs featuring a low-voltage logic gate with an unusually high input impedance for optimal system design. The device has a low RDS(on) resistance that is both temperature and gate voltage dependent. This ensures that the resistance decreases as the gate voltage is increased.
The high input impedance of the IRL3715TR ensures that the power consumption of the device is kept to a minimum. This enables the device to operate at high frequencies while still benefiting from very low on-state resistance. This improves the overall efficiency of the system.
The switching time of the IRL3715TR is also optimized to ensure minimum switching losses. The device can operate in both high- and low-upload speed, making it ideally suited for fast switching applications. The device also features built-in device protection to prevent damage in case of overload or short-circuit conditions.
In addition, the IRL3715TR features a wide voltage range from -40V to +40V, allowing it to be used in a wide range of automotive applications. The device has a power density that is significantly higher than other similar devices, enabling efficient operation in small spaces. The IRL3715TR is a robust and reliable single channel power MOSFET that offers excellent performance and low power losses in automotive applications.
The specific data is subject to PDF, and the above content is for reference
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