IRLIZ24NPBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220AB Full-Pak
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	26W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	480pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	60 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction to the IRLIZ24NPBF

The IRLIZ24NPBF is an Insulated Gate Bipolar Transistor (IGBT), more precisely an N-Channel Enhancement Mode Field-Effect Transistor (N-FET). It is notable for being a very low on-resistance and frequency-capable transistor. Because of its low on-resistance, the IRLIZ24NPBF can achieve high-speed switching while also providing low conducting losses. This makes it highly suitable for applications such as automotive and home appliances, which require both high frequency and low power dissipation.

Applications of the IRLIZ24NPBF

The IRLIZ24NPBF is a versatile device and finds use in a wide range of applications. In automotive and home appliance applications, it is commonly used for switching in low power, high frequency power supplies. Additionally, it is used in a variety of power converters, such as DC-DC, current and voltage regulating, and UPSs. The IRLIZ24NPBF is also often used in UPSs and emergency lighting, where it is used to switch large amounts of power very quickly while also providing low conducting losses. In industrial applications, the IRLIZ24NPBF can also be used for electric motor control, voltage, and current regulation. It is also suitable for applications such as winding machines and hoisting systems, as it can switch quickly and provide high efficiency. The IRLIZ24NPBF can be used for inrush current limiting, as well as for phase control and other high-frequency power supply applications.

Working Principle of the IRLIZ24NPBF

An Insulated Gate Bipolar Transistor (IGBT) is a type of field-effect transistor (FET). An IGBT is composed of two components: an N-channel FET and a PN junction. The PN junction is formed by N-type and P-type layers separated by an insulation layer.The N-channel FET is an enhancement-mode FET, so the gate voltage must be positive with respect to the source to turn the transistor on. This results in a gate current that is coupled to the main current flowing through the IGBT junction. The gate current flows through the insulation layer and creates an electric field. This field draws electrons through the insulation layer and causes a "depletion layer" to form at the IGBT junction.The depletion layer at the IGBT junction resembles a layer of dielectric or insulator. As a result, the depletion layer acts like an additional barrier to the electron current flow, thus increasing the switching time of the IGBT. This characteristic is beneficial for applications that require high frequency switching and low power dissipation.

Conclusion

The IRLIZ24NPBF is an Insulated Gate Bipolar Transistor (IGBT), more precisely an N-Channel Enhancement Mode Field-Effect Transistor (N-FET). It is notable for being a very low on-resistance and frequency-capable transistor. It has a wide range of applications, including automotive and home appliance applications, industrial motor control, and UPSs. The working principle of the IRLIZ24NPBF involves the use of an N-channel FET and a PN junction, and the formation of a depletion layer. This makes it suitable for high-frequency switching and low power dissipation applications.

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