IRLML2030TRPBF Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2.3V @ 25µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	Micro3™/SOT-23
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.3W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	110pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	1nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	100 mOhm @ 2.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	2.7A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction:

The IRLML2030TRPBF is an enhancement-type, logic-level, N-Channel MOSFET from Infineon Technologies. It’s available in the standard TO-252 package and is ideal for applications that require low on-resistance and low gate charge. The IRLML2030TRPBF is a popular choice for switching and loads that require a voltage up to 18V and a maximum current rating up to approximately 6A.

Application Field of IRLML2030TRPBF

The IRLML2030TRPBF is commonly used in various applications such as switch mode LED drivers, DC-DC switching converters, automotive load switch applications, and logic level gate drivers. The device is suitable for both commercial and industrial temperature range applications. Furthermore, the single device can replace two power MOSFETs in as little as one third of the board space.The IRLML2030TRPBF offers several features that make it ideal for use in a variety of applications. It has a low on-state resistance (RDS(on)) which is ideal for applications with low voltage drops and minimizes power dissipation. The device has over-temperature protection, output short-circuit protection, and thermal shutdown protection, ensuring the safety and reliability of any circuit that utilizes the device. Additionally, the IRLML2030TRPBF has a low gate charge (QG~10nC) which makes it suitable for high frequency switching applications.

Working principle of IRLML2030TRPBF

The IRLML2030TRPBF is an enhancement-type, logic-level, N-Channel MOSFET. This type of MOSFET works by relying on a gate voltage to control the conduction between a source and a drain for either an N-type or a P-type MOSFET. The basic principle is that, when voltage is applied to the MOSFET gate, the electrons from the metal\'s atoms will be attracted towards it. This creates an inversion layer of negatively charged electrons between the gate and source which is necessary for current to flow through the channel. This channel is formed by the source region, the channel (or drift) region, and the drain region. The electrons will flow between these three regions and act as a switch to carry current. When a voltage is applied to the gate and the MOSFET is in the OFF state, the electrons become attracted to the gate, creating the inversion layer. This attributes to a higher threshold voltage. When the gate voltage exceeds the threshold voltage, the current flows in the channel of the MOSFET and the MOSFET is said to be in the ON state. In the ON state, the gate voltage must be at a certain minimum to keep the MOSFET in the ON state, this minimum is called the ‘gate turn-on voltage.’

Conclusion:

The IRLML2030TRPBF is an enhancement-type, logic-level, N-Channel MOSFET from Infineon Technologies. It is commonly used in switch mode LED drivers, DC-DC

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