Allicdata Part #: | IRLML5203-ND |
Manufacturer Part#: |
IRLML5203 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 3A SOT-23 |
More Detail: | P-Channel 30V 3A (Ta) 1.25W (Ta) Surface Mount Mic... |
DataSheet: | IRLML5203 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Micro3™/SOT-23 |
Mounting Type: | Surface Mount |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 98 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRLML5203 is a single, N-Channel, enhancement-mode power MOSFET that belongs to the family of Field Effect Transistors (FETs). It is primarily designed as an electronic switch for a variety of applications and its innovative design offers many advantages compared to other types of FETs. Let us take a look at the IRLML5203’s main application field and working principle.
Application Field
The IRLML5203 is mainly used in digital circuits, power management systems, and control circuits. It is a single, N-Channel FET, so it is suited for applications that require very low output voltage. It is mainly used in DC-DC converters and power supply switching regulators. It is also suitable for industrial and automotive applications where high reliability and low power consumption is required. The IRLML5203 can also be used in LED lighting applications.
Working Principle
The IRLML5203 is an N-Channel enhancement-mode FET, meaning that it is an electronically-controlled switch. It is composed of a gate, drain, and source that are connected to the main circuit and a substrate connected to the ground. The substrate is an important part of the FET as it helps to provide an insulated channel for the current, allowing it to flow from the drain to the source without coming in contact with the gate. The IRLML5203 operates on the principle of voltage control. When a voltage is applied to the gate, it creates a depletion channel between the drain and the source, thereby allowing the current to flow.
Advantages
The IRLML5203 FET offers several advantages compared to other types of FETs. Its innovative design results in decreased power consumption, lower switching losses, and better heat dissipation. It also offers superior transconductance and low voltage operation which makes it ideal for power supply switching applications. Additionally, the IRLML5203 has a very low on-state resistance of 8.5 milliohms makes it is highly efficient. The FET also has an ultra-low drain-source capacitance of 5.5pF and a threshold voltage of 4V, allowing it to operate at very high speeds.
Conclusion
The IRLML5203 is a single, N-Channel, enhancement-mode power FET that offers many advantages compared to traditional FETs. This FET is mainly used in digital circuits, power management systems, LED lighting and control circuit applications. It operates on the principle of voltage control, where a voltage is applied to the gate to create a depletion channel between the drain and the source, thereby allowing the current to flow. The IRLML5203 FET’s innovative design offers decreased power consumption, better heat dissipation, lower switching losses, and superior transconductance. It also offers a very low on-state resistance and ultra-low drain-source capacitance, which allow it to operate at very high speeds.
The specific data is subject to PDF, and the above content is for reference
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