Allicdata Part #: | IRLML2246TRPBFTR-ND |
Manufacturer Part#: |
IRLML2246TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 2.6A SOT23 |
More Detail: | P-Channel 20V 2.6A (Ta) 1.3W (Ta) Surface Mount Mi... |
DataSheet: | IRLML2246TRPBF Datasheet/PDF |
Quantity: | 81000 |
Vgs(th) (Max) @ Id: | 1.1V @ 10µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Micro3™/SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 16V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 135 mOhm @ 2.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.6A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRLML2246TRPBF is a type of single n-channel HEXFET power MOSFET. This device is manufactured by International Rectifier, a company that specializes in the production and design of power management technology and other components including static control and circuit protection.
This type of power MOSFET offers low on-resistance which enables the device to have a high current level and a low voltage drop. The IRLML2246TRPBF MOSFET also features Low Gate Charge (Qg) and fast switching speed. It is able to function with a low gate-source voltage, which is also known as “enhancement mode”.
Due to its unique combination of enhanced temperature range and ultra-low on-resistance, the IRLML2246TRPBF is used for a wide variety of applications such as high-current power switching, DC-DC converters, controlling the speed of brushless DC motors, and power converters for low frequency applications.
The IRLML2246TRPBF is a one of a kind among power MOSFETs due to its unique design. It offers a high level of current while maintaining a low voltage drop. This makes it an ideal choice for applications where a high degree of power efficiency is desired. It operates in an “enhancement mode” which ensures that it is able to maintain a high level of efficiency over time.
The working principle behind the IRLML2246TRPBF is the fact that it uses both n- and p-type semiconductor regions. The device works in a manner wherein a single voltage is applied across the device, while current flows between the drain and the source. When a positive voltage is applied to the gate, it induces an electric field, which causes electrons to be drawn toward the gate. This in turn reduces the resistance between the source and drain, allowing current to flow more easily.
The IRLML2246TRPBF is able to control and regulate the flow of current between the source and the drain. It features an internal gate-source capacitor and a high frequency gate-source impedance, which helps to provide a smooth transition between on and off states. This in turn helps to reduce power dissipation and make the device more efficient.
In conclusion, the IRLML2246TRPBF is a highly efficient single n-channel HEXFET power MOSFET. Its combination of low on-resistance and fast switching speed make it ideal for a wide variety of applications, such as high-current power switching, speed control of brushless DC motors, DC-DC converters and low frequency power converters. Its unique design and working principle ensure that it is able to offer an extremely high threshold of power efficiency over time.
The specific data is subject to PDF, and the above content is for reference
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