IRLML0030TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRLML0030TRPBFTR-ND |
Manufacturer Part#: |
IRLML0030TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 5.3A SOT-23-3 |
More Detail: | N-Channel 30V 5.3A (Ta) 1.3W (Ta) Surface Mount Mi... |
DataSheet: | IRLML0030TRPBF Datasheet/PDF |
Quantity: | 50000 |
Vgs(th) (Max) @ Id: | 2.3V @ 25µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Micro3™/SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 382pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 2.6nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 5.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRLML0030TRPBF is a high-speed, low-gate-threshold voltage metal-oxide-semiconductor field-effect transistor (MOSFET). It is designed to use in applications that commonly require high switching speed and low gate threshold voltage. It has a structure that is based on high-level MOS technology, and its advanced design provides both low on-resistance RDS(ON) and a sense performance.
The IRLML0030TRPBF is most often used in switches, converters, and other applications where high-speed switching is needed. This device is capable of meeting the design requirements for a wide range of applications. It is also able to meet the high levels of electrical performance necessary for or other application.
The IRLML0030TRPBF has a variety of application fields, ranging from power management and motor control applications to solid-state lighting and power amplifiers. It can be used in systems that require very high performance, such as those found in computers and industrial automation. Additionally, the device is suitable for automotive and lighting applications, as well as any applications that require low switching losses.
The working principle of the IRLML0030TRPBF is based on three key characteristics. First, it has low gate charge and low on-resistance. The gate charge is the amount of current that is needed to switch the device from one state to another, and the on-resistance is the resistance of the device when it is in an on-state. Low gate charge and low on-resistance are both necessary for fast switching.
Second, the IRLML0030TRPBF has a low gate-threshold voltage. This means that the voltage at which the device begins to operate correctly is low, which allows for faster switching. Additionally, it has a low-output capacitance that helps reduce the power dissipation of the device. The third characteristic is the high-voltage break down capability. This means that the device can withstand higher voltages than some other MOS devices, which makes it suitable for applications that require a high breakdown voltage.
In summary, the IRLML0030TRPBF is a high-speed, low-gate-threshold voltage MOSFET device that is suitable for use in a variety of applications. Its low gate charge, low on-resistance, and low-output capacitance make it an ideal choice for applications that require high-speed switching and low power dissipation. Its high-voltage break down capability also makes it suitable for applications that require a large breakdown voltage.
The specific data is subject to PDF, and the above content is for reference
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