IRLMS1503TRPBF Allicdata Electronics
Allicdata Part #:

IRLMS1503PBFTR-ND

Manufacturer Part#:

IRLMS1503TRPBF

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 3.2A 6-TSOP
More Detail: N-Channel 30V 3.2A (Ta) 1.7W (Ta) Surface Mount Mi...
DataSheet: IRLMS1503TRPBF datasheetIRLMS1503TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.09600
10 +: $ 0.09312
100 +: $ 0.09120
1000 +: $ 0.08928
10000 +: $ 0.08640
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: SOT-23-6
Supplier Device Package: Micro6™(TSOP-6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRLMS1503TRPBF is a single P-channel enhancement mode Field-Effect Transistor (FET) from Infineon Technologies, offering low gate charge and low on-resistance. This makes the IRLMS1503TRPBF an attractive component for applications including power management in mobile, remote, battery powered and automotive applications, and DC/DC converters.

Operation of the IRLMS1503TRPBF is driven by a voltage signal applied to the gate. When this voltage is at a logic low, the FET is off or in its \'off\' state, however when the gate signal is at a logic high, the device switches on, or enters its \'on\' state.

The on-state performance of the device is dictated by its gate charge, which is a measure of the amount of charge required to alter the drain current of the FET, and the on-resistance. The lower these figures, the lower the FET\'s power conduction losses.

The IRLMS1503TRPBF FET has an extremely low gate charge of 5.3nC, and an impressive on-resistance of 0.33Ω. This combination results in less conduction loss in the FET and ultimately lower power dissipation. As a consequence, the IRLMS1503TRPBF is suitable for applications where losses cannot be tolerated, and enabled designs must operate with efficiency in mind.

The logic level gate drive threshold of the IRLMS1503TRPBF is adjustable by adding a series input resistor. For example, the IRLMS1503TRPBF can switch from its \'off\' to its \'on\' state with a gate voltage of 1.3V when a 10kΩ resistor is connected to the gate. This flexibility permits designers to adjust the gate drive threshold to meet their design requirement.

The capability of IRLMS1503TRPBF helps in achieving very efficient designs with minimal power dissipation whilst offering the required features and optimum power performance. The IRLMS1503TRPBF is therefore ideal for mobile and battery powered applications, such as audio amplifiers and charge pumps.

The IRLMS1503TRPBF is RoHS compliant and Halogen-free, thus supporting green product designs such as those used in automotive applications. The robust, hermetic SOT-223 package offers a storage temperature range of -55°C to +150°C (-67°F to +302°F), making it suitable for harsh environments.

The specific data is subject to PDF, and the above content is for reference

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