Allicdata Part #: | IRLML5103CT-ND |
Manufacturer Part#: |
IRLML5103TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 30V 760MA SOT-23 |
More Detail: | P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount ... |
DataSheet: | IRLML5103TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Micro3™/SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.1nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 600mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 760mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The IRLML5103TR is a single enhancement mode, logic level, N-channel MOSFET. It is a part of the family of PowerTrench MOSFETs from International Rectifier, Inc. It is a standard MOSFET but with lower gate charge and simpler drive requirements as compared to standard MOSFETs making it ideal for high current and low voltage operation. The device also comes with a built-in protection feature which is designed for operation in low voltages or current-limiting applications. The IRLML5103TR is able to handle up to 60V and can deliver up to 23A of continuous drain current. It also has a very low on-resistance at 4.0 mΩ.
The IRLML5103TR has a wide range of applications. It is ideal for low voltage and high current applications, such as DC-DC converters. Other applications include power management systems, and in port protection, such as automotive reverse battery protection. It is also well suited for applications where it is important to reduce power consumption, such as LCD displays, battery powered devices, and communications systems.
The working principle of the IRLML5103TR is very similar to that of other MOSFETs. It has a source, drain, and gate leads. When a positive voltage is applied to the gate, a thin layer of oxide serves as an insulator, and the channel between the source and drain becomes filled with electrons. This causes the current to flow from the source to the drain. When the gate voltage is removed, the electrons in the channel flow away from the junction, thus turning off the device. This property is known as the gate voltage re-sponse, and it makes the device an excellent choice for use in applications with low voltages and high currents.
The IRLML5103TR is an ideal device for those applications which require high current and low voltage operation. Its low gate charge and built-in protection feature make it an ideal choice for various applications. Its wide range of applications make it highly versatile and a perfect fit for many applications.
The specific data is subject to PDF, and the above content is for reference
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