IRLMS6802TRPBF Discrete Semiconductor Products

The IRFMS6802TRPBF is a single N-Channel power MOSFET, it is one of International Rectifier’s many advanced MOSFET products designed for high-speed switching applications. The IRFMS6802TRPBF is suitable for a wide range of applications including motor control, lighting control, and switch-mode power supplies.

The IRFMS6802TRPBF has a nominal drain-source breakdown voltage of 73V, with a maximum drain-source voltage of 85V. The device has a typical drain current of 18.0A and a maximum drain current of 30.0A. Maximum on-state drain to source resistance is equivalent to 19mΩ. The device features an enhanced parasitic body diode for low VCEsat and low switching losses.

To properly use the IRFMS6802TRPBF, one must be familiar with the principles of MOSFETs. MOSFETs are voltage-controlled transistors that feature a three-terminal configuration. Two of the terminals (called the drain and source) form a channel between them that allows current flow when a potential difference (voltage) is applied to the gate. The source serves as the input for the transistor, the gate is where the control voltage is applied, and the drain is the output terminal.

The IRFMS6802TRPBF is a type of MOSFET called an enhancement mode. This type of MOSFET functions as an electrically controlled switch that is OFF when there is no applied voltage at the gate. When the gate is supplied with a positive voltage, the MOSFET turns ON and current flows through the channel between the source and drain. This type of MOSFET is used in applications where the output requires switching between two distinct states (e.g. on and off, high and low).

The IRFMS6802TRPBF’s low on-state resistance (RDSon) makes it very suitable for applications such as motor control and lighting control, as it allows large currents to flow with minimal losses. The device’s low VCEsat also helps to minimize power losses in many switch-mode power supplies. The MOSFET’s maximum drain current of 30.0A is sufficient for most applications that require a high current capacity.

The IRFMS6802TRPBF is an ideal choice for applications requiring a high current, low voltage MOSFET. Its low RDSon, tight gate-source capacitance specifications and low VCEsat make it an excellent choice for many applications. Furthermore, the device’s low parasitic body diode helps to minimize losses during switching operations.