Allicdata Part #: | IRLMS2002GTRPBFTR-ND |
Manufacturer Part#: |
IRLMS2002GTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 6.5A 6TSOP |
More Detail: | N-Channel 20V 6.5A (Ta) 2W (Ta) Surface Mount Micr... |
DataSheet: | IRLMS2002GTRPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | Micro6™(SOT23-6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1310pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 6.5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRLMS2002GTRPBF is a single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) contained in a surface-mount package. It is in a near-rectangular plastic package with two side gates and three bottom gates. This device is equipped with two independent gate terminals that can be used to control the on-state current. The small size of this transistor makes it ideal for high-density applications in complex systems.
The IRLMS2002GTRPBF belongs to the family of N-channel depletion-mode MOSFETs. This MOSFET is designed for circuit applications that require low ON resistance, low gate charge, and good gate-to-drain capacitance characteristics. This MOSFET has a lightly doped epitaxial layer that lies between the heavily doped source and drain regions. It is designed to prevent the electric field from reaching the gate terminal and, as a result, reduce gate-to-drain capacitance. The device also features good thermal performance.
This MOSFET is primarily used in switching applications, such as DC-DC converters, motor controllers, and relay drivers, where it is expected to be used in an environment with high switching frequency. It is also suitable for use in circuit protection, voltage control, and other high-current and low-voltage applications. The IRLMS2002GTRPBF is available in a variety of packages, making it suitable for space-constrained and high-density applications.
The working principle of the IRLMS2002GTRPBF is based on the MOSFET switching mechanism. A MOSFET operates by controlling the amount of current that passes between its source and drain terminals. A voltage applied to the gate terminal controls the amount of current that is allowed to flow from the source to the drain by the MOSFET. When the gate voltage is sufficiently large, the MOSFET will enter its “on” state and allow the current to flow. Conversely, when the gate voltage is insufficiently small, the MOSFET will enter its “off” state and block the current from flowing. In the IRLMS2002GTRPBF, the gate voltage is controlled by two independent gate terminals, allowing for precise current control.
The IRLMS2002GTRPBF is an excellent choice for applications that require a high-performance, low-power MOSFET with good thermal performance and switching capability. It is ideal for applications where space is limited and the thermal performance of the device is important. Furthermore, its multiple gate terminals provide precise current control and allow for easy implementation in complex systems. Due to its exceptional performance, the IRLMS2002GTRPBF has become one of the most popular MOSFETs available on the market today.
The specific data is subject to PDF, and the above content is for reference
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