IRLML6344TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRLML6344TRPBFTR-ND |
Manufacturer Part#: |
IRLML6344TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 5A SOT23 |
More Detail: | N-Channel 30V 5A (Ta) 1.3W (Ta) Surface Mount Micr... |
DataSheet: | IRLML6344TRPBF Datasheet/PDF |
Quantity: | 294000 |
Vgs(th) (Max) @ Id: | 1.1V @ 10µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Micro3™/SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 6.8nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRLML6344TRPBF is a logic level Power MOSFET (metal–oxide–semiconductor field-effect transistor) that is a key component of circuit design in the field of electronics. With a wide range of uses, this n-channel enhancement mode MOSFET can be found in a variety of circuit layouts to assist with motor control, power regulation and switching, allowing a circuit to function as a voltage amplifier or a switched mode power supply. The IRTLML6344TRPBF offers many advantages to circuit designs, such as its low resistance and fast switching time.
The IRLML6344TRPBF has an input voltage range of -4.5V to -20V. It has a drain-source on-state resistance of 8.7 milli Ohms at 10V and a typical gate-source threshold voltage of 2.3V. Maximum drain current is rated at 63A and maximum drain-source voltage is rated at 34V. It has a maximum continuous drain current of 44A and its operating junction temperature range is -55 degrees Celsius to +150 degrees Celsius.
The working principles of the IRLML6344TRPBF are in line with other enhancement-mode MOSFETs. Electronic conduction through this MOSFET occurs when a voltage is applied between its gate and source terminal. This creates a field-effect due to the flow of electric charges, allowing the current consisting of majority carriers to flow between the drain and source terminals across a reverse-biased diode.
The IRLML6344TRPBF is a great choice for use in a variety of applications, including complicated power control, motor control and current-sensing circuit designs. It can be used to create an electronic switch, allowing for the user to control current in both directions and adjust the high side supply voltage as needed. The low resistance of this MOSFET and its fast switching time makes it ideal for applications such as switch mode power supplies (SMPS), DC-DC converters, high-frequency AC-DC converters and other high-frequency applications.
In addition, this MOSFET is compatible with both pulse width modulation (PWM) and pulse-frequency modulation (PFM) power control. This allows it to be used in a variety of applications, such as controlling motor speed, providing phase control, dimming lights and other applications involving motor speed control and voltage regulation. The IRTLML6344TRPBF provides reliable performance in these applications as its low resistance allows for better power handling and faster switch times.
Overall, the IRLML6344TRPBF is an excellent choice for a variety of applications. Its low resistance and fast switch times are ideal for power control, motor control and voltage regulation. Its compatibility with PWM and PFM power control makes it suitable for applications involving motor speed control and voltage regulation. Its wide range of uses and excellent performance make it a reliable choice for any circuit design.
The specific data is subject to PDF, and the above content is for reference
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