IRLML6402TRPBF Discrete Semiconductor Products

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   sales@allicdata.com

1. Describe

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This advantage, combined with the well-known fast switching speed and rugged device design of HEXFET power MOSFETs, provides designers with an extremely efficient and reliable device for battery and load management. A thermally enhanced large pad leadframe is used in a standard SOT-23 package to produce the industry's smallest footprint for a HEXFET power MOSFET. The package, known as Micro3iw , is ideal for applications where printed circuit board space is at a premium. The Micro3's low profile (<1.1mm) allows it to easily fit into very thin applications such as portable electronics and PCMCIA cards. Thermal resistance and power dissipation are the best.

2. Feature

    1. Ultra-low on-resistance

    2. P-channel MOSFET

    3. SOT-23 footprint

    4. Thin (<1.1mm)

    5. Tape and reel packaging

    6. Quick switch

    7. Lead-free

    8. RoHS Compliant, Halogen Free

3. Pin configuration