IRLML6346TRPBF Allicdata Electronics
Allicdata Part #:

IRLML6346TRPBFTR-ND

Manufacturer Part#:

IRLML6346TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 3.4A SOT23
More Detail: N-Channel 30V 3.4A (Ta) 1.3W (Ta) Surface Mount Mi...
DataSheet: IRLML6346TRPBF datasheetIRLML6346TRPBF Datasheet/PDF
Quantity: 60000
Stock 60000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Micro3™/SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 24V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 63 mOhm @ 3.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRLML6346TRPBF is a logic-level N-channel Enhancement-mode MOSFET. It is a power mosfet with low on-resistance, fast switching, and ESD protection. As such, it is widely used in various applications. The device is housed in a small SOT-23 surface-mount package to maximize board space and minimize weight. The IRLML6346TRPBF consists of an advanced trench power MOSFET with integrated ESD protection which is designed to significantly reduce switching losses compared to typical MOSFETs.

The IRLML6346TRPBF is a power-MOSFET with superior features for many applications. Its low on-resistance, high speed, and ESD protection make it ideal for high-current, high-voltage applications such as switching power supplies, motor control, and power converters. The device has a high-frequency switching capability, making it suitable for low-noise circuitry. The IRLML6346TRPBF is also widely used in various consumer electronics such as laptops, cameras, and LCD TVs.

The IRLML6346TRPBF has a unique feature, which is its integrated ESD protection. This device has an ESD rating of 2kV which provides significant protection from the damaging effects of electrostatic discharge. The device also has a maximum drain-source voltage of 30V and a maximum drain-source on-state resistance of 4.0 ohms. This makes it suitable for a wide range of applications including load switching, motor control, and power converters.

The IRLML6346TRPBF also has an excellent RDS(on) vs. temperature characteristic. Its temperature coefficient of on-state resistance is −1.6mΩ/°C, which makes it an excellent option for high temperature applications. The IRLML6346TRPBF also has a low gate charge which reduces switching losses and improves the efficiency of the circuit. The device also has a low input capacitance, making it suitable for high frequency applications. This low input capacitance also reduces switching losses in high frequency circuits.

The working principle of the IRLML6346TRPBF is as follows. The device operates as an N-type MOSFET and is normally in a non-conducting state. When a positive gate-source voltage is applied, a drain current flows from the gate to the source and the MOSFET turns on. The device will stay on as long as the gate-source voltage is maintained. When the gate-source voltage is removed, the device will turn off and the drain current will stop flowing.

In conclusion, the IRLML6346TRPBF is a high-performance power-MOSFET. It has a low on-resistance, high speed, ESD protection, and excellent RDS(on) vs. temperature characteristics which make it suitable for various applications in many different industries. Its integrated ESD protection offers robust protection against electrostatic discharge damage, while its low input capacitance reduces switching losses.Its wide range of voltage and current ratings make the IRLML6346TRPBF an ideal choice for switching power supplies, motor control, and power converters.

The specific data is subject to PDF, and the above content is for reference

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