Allicdata Part #: | IRLM210ATF-ND |
Manufacturer Part#: |
IRLM210ATF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 770MA SOT-223 |
More Detail: | N-Channel 200V 770mA (Ta) 1.8W (Tc) Surface Mount ... |
DataSheet: | IRLM210ATF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 390mA, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 770mA (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRLM210ATF is a single P-channel power MOSFET designed and manufactured by International Rectifier. This device is specifically designed for applications that require low drain-source ON-resistance and high-speed switching performance. With its easy to use gate drive and efficient thermal design, it is a suitable choice for many power related applications such as in power supplies, DC-DC converters, battery chargers, and many other power management applications.
In terms of its electrical characteristics, the IRLM210ATF has a drain-source ON-resistance of just 0.006Ohms and an Absolute Maximum DC Drain Current of 6A. With a Gate Source Voltage of 8V, this device has a solid off-state breakdown voltage of just 20V. The device has a gate charge of 16nC and its gate capacitance is just 5.5pF allowing for fast switching performance.
The working principle of this device is relatively straightforward. The entire IRLM210ATF device comprises two active components; an N-channel MOSFET and a diode between the drain and source. When the gate-source voltage is applied, electrons are allowed to pass freely through the MOSFET and charges accumulate in the drain. These charges create a drain-source voltage which, in turn, allows conduction through the MOSFET even when the gate voltage is removed. To shut off the device, the voltage at the gate pin must be raised above the threshold voltage so that the electrons will not be attracted back to the source, thus stopping the drain-source flow of current.
The IRLM210ATF is a suitable choice for many power management applications due to its low on-resistance, breakdown voltage and gate capacitance. It is especially suitable for applications that require higher power levels such as in power supplies, DC-DC converters, and battery chargers. It can also be used in high-efficiency applications to save energy or in low-voltage applications to use less power. Additionally, the low gate charge of the device makes it an attractive choice for high-speed switching.
In terms of its applications field, the IRLM210ATF is often used in switching regulators, DC-DC converters, LED drivers and motor drives. It can also be used as a switch in systems using Buck, Boost, Buck-Boost, Flyback and Forward topologies. All of these applications require a reliable power switch with low on-resistance and gate capacitance, making the IRLM210ATF an ideal choice. Other applications including RF switches, discrete one-shot applications, RS232, and 432 interfacing circuits are also well suited to this device.
To summarize, the IRLM210ATF is a single P-channel power MOSFET with low drain-source ON-resistance and high-speed switching performance. Its gate charge and gate capacitance also provide for efficient thermal design by limiting the amount of power dissipated as switching losses. Its wide range of applications including power supplies, DC-DC converters, LED drivers battery chargers, RF switches and discrete one-shot circuits makes it a suitable choice for most high-performance power management applications.
The specific data is subject to PDF, and the above content is for reference
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