IRLML2502GTRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRLML2502GTRPBFTR-ND |
Manufacturer Part#: |
IRLML2502GTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 4.2A SOT-23-3 |
More Detail: | N-Channel 20V 4.2A (Ta) 1.25W (Ta) Surface Mount M... |
DataSheet: | IRLML2502GTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | Micro3™/SOT-23 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 4.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 4.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IRLML2502GTRPBF is a high-performance, low-voltage, low-on-resistance, N-channel enhancement mode transistor. This unit features an on-resistance rating of up to 8.8mOhm, making it ideal for use in emerging applications such as low-power, high-speed switching, data communications, and audio amplification.
As a type of Field-Effect Transistor (FET), this product utilizes a three-terminal transistor with a gate, source, and drain. FETs are voltage-controlled devices, meaning that the voltage applied to the gate electrode controls the current that flows between the source and drain electrodes. This IRLML2502GTRPBF works as an enhancement type FET because it only turns on when a certain voltage level is applied to the gate electrode. This type of device is often used to control power in low voltage circuits.
When it comes to uses, this IRLML2502GTRPBF can be used in applications such as switch mode power supplies, portable computers, Digital Signal Processor (DSP) applications, low-voltage logic circuits, as well as load and line regulation in portable devices. Additionally, this product can also be used in radio frequency (RF) applications such as switchable band-pass filters and amplifier designs.
This IRLML2502GTRPBF is designed to operate at low voltages, typically with the gate-to-source break down voltage of 2.3 volts to 4.3 Volts. It offers an optimal output performance with an RDS(on) of 8.8 mOhm typically at 4.5V Vgs and Qg of 13 nC. It also includes a dynamic dV/dt, also known as body diode, which is a parasitic diode formed between the source and drain terminals, that can help protect the device from damage caused by dynamic charge injection.
Furthermore, this FET incorporates a special Avalanche rated breakdown voltage technology that allows it to help protect sensitive circuits from potentially hazardous transient events. This technology enables users to protect circuits from ESD, IEC61000-4, and IEC61000-4-2 induced transient spikes, helping ensure reliable operation during mission-critical applications.
Overall, this IRLML2502GTRPBF is suitable for use in a wide variety of applications, including switch mode power supplies, portable computers, Digital Signal Processor (DSP) applications, low-voltage logic circuits, as well as radio frequency (RF) applications such as switchable band-pass filters and amplifier designs. With its low-voltage design, low RDS(on), and special Avalanche rated breakdown voltage technology, it is sure to be the go-to product for those looking to enhance their application’s performance while still maintaining reliable protection.
The specific data is subject to PDF, and the above content is for reference
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