IRLML6302TRPBF Allicdata Electronics
Allicdata Part #:

IRLML6302PBFTR-ND

Manufacturer Part#:

IRLML6302TRPBF

Price: $ 0.09
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 780MA SOT-23
More Detail: P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount ...
DataSheet: IRLML6302TRPBF datasheetIRLML6302TRPBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.09000
10 +: $ 0.08730
100 +: $ 0.08550
1000 +: $ 0.08370
10000 +: $ 0.08100
Stock 1000Can Ship Immediately
$ 0.09
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: Micro3™/SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 540mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 97pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.45V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 600 mOhm @ 610mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 780mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The IRLML6302TRPBF is a N-Channel logic-level enhancement-mode power MOSFET produced by International Rectifier. The device is designed to withstand high energy in the avalanche and commutation mode. This makes the IRLML6302TRPBF suitable for applications requiring very low on-state resistance, high speed switching and good avalanche performance.

IRLML6302TRPBF is made of an integrated, low-cost and low-voltage highly reliable power MOSFET. The device features an Avalanche Energy Rated up to 2J and a breakdown voltage of 7V. It is rated at 30V and provides a low on-resistance of 3.2 mOhms typical.

This logic level-enhancement mode power MOSFET is typically used in DC-DC conversion and synchronous rectification applications. It can also be used to switch high-frequency multi-channel motor and LED drivers, as well as high power CPUs.

The IRLML6302TRPBF has two MOSFETs in a single package; the control gate can be driven by digital logic level signals and the source connects to ground. The MOSFETs can be switched individually by driving the gate to the appropriate voltage with respect to the drain in order for the MOSFET to turn ON or OFF.

The working principle of the IRLML6302TRPBF is based on the basic MOSFET structure. The IRLML6302TRPBF is a 3 terminal device that consists of a source terminal, a drain terminal, and a control gate. When a voltage is applied to the gate, it increases a conductivity channel between the source and the drain. As a result, current will travel from the drain to the source.

The IRLML6302TRPBF has a wide range of capabilities, including high performance and low on-resistance features, making it an ideal choice for various applications. It can be used in switched mode power supplies, DC-DC converters, high-frequency motor and LED drivers, and high current CPUs.

In conclusion, IRLML6302TRPBF is an excellent device for applications requiring reliable power and good performance with very low on-state resistance. It is also an ideal solution for switching high frequency, multi-channel motor and LED drivers as well as high power CPUs. The IRLML6302TRPBF is a versatile N-Channel MOSFET with a unique combination of features and capabilities that make it a reliable solution for various applications.

The specific data is subject to PDF, and the above content is for reference

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