IRLML6401TR

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The IRLML6401TR is a type of single P-channel enhancement mode power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by International Rectifier Corporation (IR). The IRLML6401TR is enclosed in a TO-263 or D2Pak package (depending on the version). The IRLML6401TR is designed for use in cost-efficient, high-performance power MOSFET applications.

The IRLML6401TR is based on innovative and advanced planar process technology offering a low-thermal resistance between the device and heat-sink. This allows for a significant application of high-power switching in consumer and industrial electronics. The intrinsic ruggedness and constant avalanche characteristics of the IRLML6401TR makes it ideal for use in various automotive and consumer electronics applications. In addition, the IRLML6401TR offers a low-voltage discharge current, which helps enhance the performance in automotive applications, notably in alarm systems.

The IRLML6401TR is composed of a series of P-Channel MOSFETs in a single device. It is designed to operate in a wide voltage range of 6 to 20 volts and a peak current capability of over 9 amps. The IRLML6401TR is capable of operating both linear and switching operations due to its low on-resistance and high-drain source voltage rating.

The IRLML6401TR features a symmetrical body diode allowing it to operate efficiently in both linear and switching modes. In linear mode, the IRLML6401TR has a maximum drain-source voltage rating of 60 volts and a maximum drain current of 3.2 A DC. While in switching mode, it has a maximum drain-source voltage of 20 volts and a peak current of over 9 A.

The switching operation of the IRLML6401TR is enabled by a P-channel enhancement mode characteristic. In enhancement mode, the MOSFET requires a small gate-to-source voltage to turn-on. However, when the gate-source voltage is 0V, the MOSFET is off, and no drain current will flow. When voltage is applied to the gate of the IRLML6401TR, the voltage polarity attracts electrons, resulting in an increase in the conductivity of the drain and source region. As a result, the drain-source voltage of the device is lowered, and current flows through the device. This enables the MOSFET to switch rapidly and efficiently.

Advantages of using the IRLML6401TR include its low on-resistance, low gate charge, low-voltage discharge current, and fast switching time. Furthermore, the IRLML6401TR offers excellent reliability and guaranteed temperature performance and load life. The IRLML6401TR provides a cost-effective solution to power supply and switching applications in industrial, automotive, and consumer electronics.

The IRLML6401TR is an extremely versatile MOSFET that can be used in a variety of applications. It is commonly used in battery-powered circuits, converters, motor drives, UPS, inverters, servo amplifiers, variable speed motors, and in gate-driven logic control circuit for high-side switching applications.

In conclusion, the IRLML6401TR is an excellent, cost-effective and reliable P-channel enhancement mode power MOSFET that offers excellent performance in both linear and switching operations. Its low-voltage discharge current and fast switching time make it a preferred choice for a variety of applications in industrial, automotive, and consumer electronics.

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