Allicdata Part #: | IRLMS6702CT-ND |
Manufacturer Part#: |
IRLMS6702TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 20V 2.4A 6-TSOP |
More Detail: | P-Channel 20V 2.4A (Ta) 1.7W (Ta) Surface Mount Mi... |
DataSheet: | IRLMS6702TR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | Micro6™(SOT23-6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.7W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 210pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 8.8nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1.6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Cut Tape (CT) |
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The IRLMS6702TR is a single n-channel, enhanced power MOSFET manufactured by Infineon Technologies. It is part of Infineon’s OptiMOS™ 5-60V product line. OptiMOS™ delivers the industry’s highest performance and best power efficiency in an ultra-compact package.
The IRLMS6702TR is ideal for high speed switching applications, providing low on-resistance and low gate charge. It also features a low gate to drain capacitance and improved gate threshold voltage. It is designed to operate in conditions of up to 100°C and features internal ESD protection.
Some of the applications for the IRLMS6702TR include audio amplifiers, point-of-load power converters, high-speed switching applications, such as for LCD TVs and TV boxes, as well as DC to DC conversion in notebook PCs and servers. It is also suitable for automotive applications, such as air conditioners, power windows and light control systems.
In order to understand the working principle of the IRLMS6702TR, it helps to understand the basics of how a MOSFET works. A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of transistor. The three major parts of a MOSFET are the drain, the source, and the gate.
The gate is responsible for controlling current conduction between the source and the drain. It is basically an insulated gate that can be either on or off. When the gate is on, current can flow. When the gate is off, current cannot flow. In order for the gate to be switched on or off, an electric charge needs to be applied to the gate.
The IRLMS6702TR utilizes a process that increases the drain voltage of the electrical charge applied to the gate (VGS) from the normal 5 volts to 5.6 volts, thus providing higher performance compared with traditional MOSFETs. This also allows for a higher load current to be sustained for longer periods of time.
The IRLMS6702TR also features a low internal gate resistance (RDS(on)) and a low input capacitance. The low RDS(on) is desirable in high power switching applications because it results in lower power dissipation. The low input capacitance is advantageous because it reduces switching times and increases the overall efficiency of the design.
The IRLMS6702TR also features integrated ESD protection. This helps to protect the device from electrostatic discharge, a type of electrical disturbance that can cause damage or be an interference source. The integrated ESD protection helps to reduce damage to the device and extends its lifetime.
Overall, the IRLMS6702TR provides high performance and reliability in a wide array of applications. Its low RDS(on), low input capacitance and integrated ESD protection make it ideal for use in a variety of applications, from audio amplifiers to automotive applications. With its improved gate threshold voltage and high temperature operation, it is an excellent choice for many applications requiring high power switching or high speed switching.
The specific data is subject to PDF, and the above content is for reference
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