IXFA36N20X3

Gate Charge (Qg) (Max) @ Vgs:	21nC @ 10V
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263AA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	176W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1425pF @ 25V
Vgs (Max):	±20V
Series:	HiPerFET™
Vgs(th) (Max) @ Id:	4.5V @ 500µA
Rds On (Max) @ Id, Vgs:	45 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	36A (Tc)
Drain to Source Voltage (Vdss):	200V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active

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Introduction

IXFA36N20X3 is a powerful and reliable transistor device, use primarily in power switching applications, such as motor control, lighting and switching applications. The device is a single press-pack, isolated type (HEXFET®) power MOSFET transistor with a very low on-resistance, which allows it to be used in high current applications. In this article, we will discuss the application field and working principle of IXFA36N20X3 transistor.

Applications of IXFA36N20X3

IXFA36N20X3 is a versatile and robust transistor, primarily used for power switching applications, such as motor control, lighting, and switching. The device features a low on-resistance, allowing it to be used in applications having high current. In addition, IXFA36N20X3 can also be used in other areas such as resistive load switching, AC motor control, H-bridge motor control, switching power supplies, power amplifiers, and voltage regulators to name a few. This transistor can be used in DC-DC converters, display lighting, and remote power supplies (RPS). Furthermore, the device has a wide operating temperature range, making it suitable for applications in harsh climates, vibrations and shock-prone environments.

Working Principle of IXFA36N20X3

IXFA36N20X3 is a MOSFET transistor, which stands for metal-oxide-semiconductor field-effect transistor. The device works on the principle of controlling the electric current by controlling the shape of an electric field. In an MOSFET, the gate terminal is used to control the electric current flow between the source and drain terminals. When a voltage is applied to the gate terminal, an electrical field is created, which changes the shape of the depletion region. This changing electric field modulates the electric current flow between the source and drain terminals.

The IXFA36N20X3 MOSFET features a very low on-resistance, which means the transistor can conduct large amounts of current between the source and drain terminals. This is why IXFA36N20X3 makes a great choice for applications involving high currents.

The device has a low total gate capacitance which keeps the gate voltage fluctuation relatively low when switching on/off. This ensures that the device operates consistently and accurately in applications where power fluctuates. The device also has a fast switching speed, which is an important feature for applications involving high speed operation.

The IXFA36N20X3 is also designed to have superior thermal management, making it suitable for applications involving higher temperatures. It features a lower thermal resistance, which means that it can dissipate heat more efficiently.

Conclusion

In conclusion, IXFA36N20X3 is a versatile, robust and reliable transistor device, used primarily for power switching applications, such as motor control, lighting, and switching. The device features a low on-resistance, allowing it to be used in application requiring high current. In addition, the device has a fast switching speed and superior thermal management, making it suitable for applications involving high temperatures.

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