Allicdata Part #: | IXFA3N80-ND |
Manufacturer Part#: |
IXFA3N80 |
Price: | $ 4.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 3.6A TO-263 |
More Detail: | N-Channel 800V 3.6A (Tc) 100W (Tc) Surface Mount T... |
DataSheet: | IXFA3N80 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 4.29232 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (IXFA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 685pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFA3N80 is a field-effect transistor, part of the N-channel MOSFET family and specifically known as a fixed-drain-load MOSFET. These devices have been designed to provide high performance in applications such as industrial, consumer, and automotive motor control, motion control, motor drive, power management, and power relay applications.
The IXFA3N80 uses an N-Channel MOSFET configuration which features a fixed-drain-load structure. This structure is typically used for high-voltage applications that require relatively low switching speed such as power relays, power management, and power converter applications. The IXFA3N80 is housed in a compact package, offering superior thermal performance in a small form-factor.
The working principle of the IXFA3N80 involves the use of a gate terminal to control the current flow of the device. When a positive voltage is applied to the gate, it in turn creates a conductive channel between the source and drain. This allows current to flow from the source to the drain. Conversely, when a negative voltage is applied to the gate, it creates an electrostatic field between the source and drain, causing the channel to be blocked, thereby stopping the current flow.
One of the advantages of the IXFA3N80 is its low on-resistance, meaning that less energy is lost as heat compared to other MOSFETs. This coupled with its fast switching speeds makes it an ideal choice for high-speed applications such as motor control and power management.
The IXFA3N80 also comes with its own protection circuit, allowing it to withstand surges up to 20A. This makes it suitable for applications which require extra protection, such as industrial and automotive motor control, and power relay applications.
Overall, the IXFA3N80 is a versatile and reliable MOSFET designed specifically for high-voltage applications. Its low on-resistance combined with its fast switching speed and integrated protection circuit make it an ideal choice for applications that require high-efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
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