Allicdata Part #: | IXFA20N85XHV-ND |
Manufacturer Part#: |
IXFA20N85XHV |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 850V/20A ULTRA JUNCTION X-CLASS |
More Detail: | N-Channel 850V 20A (Tc) 540W (Tc) Surface Mount TO... |
DataSheet: | IXFA20N85XHV Datasheet/PDF |
Quantity: | 147 |
Vgs(th) (Max) @ Id: | 5.5V @ 2.5mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak-HV) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 540W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1660pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 330 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 850V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFA20N85XHV is a type of insulated gate field effect transistor (IGFET) manufactured by Infineon. It is a single MOSFET consisting of a lateral N-channel MOSFET with a rating of 20A and 85mΩ of on-resistance. It is a complement to IXFH20N85XHV and is used in motor systems, buck converters, or as power switches. The IXFA20N85XHV is part of a family of high side products that feature integrated protection functions, current sensing, and true high-side capability.
The IXFA20N85XHV can be used for a wide range of applications such as in automotive power supplies and driver stages, solar inverters, and high-side drives in off-board chargers. It is also suitable for applications that require low conduction losses and high electrical reliability.
The IXFA20N85XHV has a control terminal and the drain and source pins. It has a breakdown voltage of 54V and is packaged in a SOT-223 package. This device has a low on-resistance of 85mΩ and low threshold voltage (Vth) for a wide variety of applications. It is also designed with a temperature sensing current, which allows the device to remain in a safe operating temperature range.
The working principle of the IXFA20N85XHV is based on its MOSFET architecture. In the MOSFET structure, the gate terminal is electrically isolated from the source and drain by an insulator layer. When a positive voltage is applied to the gate, the charges in the insulator get attracted to the gate and form an inversion layer at the interface between the source and drain, allowing a flow of current between them. The current flow is regulated by the amount of gate voltage as the gate voltage increases, the “width” of the inversion layer increases and the resistance between the source and the drain decreases.
The IXFA20N85XHV is an ideal choice for medium and high power applications. It can handle up to 20A with a low on-resistance of 85mΩ and low threshold voltage. It features integrated protection functions and temperature sensing current, which makes it easy and safe to use. It is highly reliable, as it is designed to withstand high operating temperatures and has a wide range of junction temperature conditions. It is a versatile device that can be used for a variety of applications and offers a high degree of functionality and performance.
The specific data is subject to PDF, and the above content is for reference
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