| Allicdata Part #: | IXFA230N075T2-7-ND |
| Manufacturer Part#: |
IXFA230N075T2-7 |
| Price: | $ 3.40 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 75V 230A TO-263-7 |
| More Detail: | N-Channel 75V 230A (Tc) 480W (Tc) Surface Mount TO... |
| DataSheet: |  IXFA230N075T2-7 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 3.06470 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Supplier Device Package: | TO-263-7 (IXTA..7) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 480W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10500pF @ 25V |
| Vgs (Max): | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 178nC @ 10V |
| Series: | GigaMOS™, HiPerFET™, TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 230A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFA230N075T2-7 is a field-effect transistor (FET) and one of the most popular power semiconductor devices for switching. It is a single-gate MOSFET designed to handle large currents and voltages. It is capable of operating efficiently at high frequencies and is applicable in a variety of applications including switching, power conversion, and power management.
The IXFA230N075T2-7 is constructed using high-frequency gallium nitride (GaN) technology, which allows it to switch quickly, operate at high voltages, and dissipate low power. The device is also resistant to latch-up and has a low on-resistance. This makes it ideal for use in applications requiring high-frequency switching, such as power supplies, electric vehicles, and more.
The operation of a FET depends on the number of carriers—electrons or holes—in the gate region. This can be controlled by applying the Gate-Source Voltage (VGS) across the gate and source. When VGS is high, the number of carriers increases, allowing current to flow from the source to the drain. When VGS is low, the number of carriers decreases, blocking current flow and turning the device off. This simple yet powerful mechanism gives the FET its switching capability.
The IXFA230N075T2-7 is designed to handle large currents and voltages and operates at high frequencies, making it suitable for use in a variety of applications. Its low on-resistance and high switching speed make it ideal for applications such as power supplies, electric vehicles, renewable energy systems, UPS, and more. The device is also highly resistant to latch-up, which helps ensure reliable operation.
In summary, the IXFA230N075T2-7 is a single-gate MOSFET designed to handle large currents and voltages and operate at high frequencies. It is constructed using gallium nitride technology and is highly resistant to latch-up. Its low on-resistance and high switching speed make it ideal for applications such as power supplies, electric vehicles, renewable energy systems, and UPS.
The specific data is subject to PDF, and the above content is for reference
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