IXFA90N20X3 Allicdata Electronics
Allicdata Part #:

IXFA90N20X3-ND

Manufacturer Part#:

IXFA90N20X3

Price: $ 4.98
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: 200V/90A ULTRA JUNCTION X3-CLASSN-Channel 200V 90A...
More Detail: N/A
DataSheet: IXFA90N20X3 datasheetIXFA90N20X3 Datasheet/PDF
Quantity: 79
1 +: $ 4.98330
10 +: $ 4.83380
100 +: $ 4.73414
1000 +: $ 4.63447
10000 +: $ 4.48497
Stock 79Can Ship Immediately
$ 4.98
Specifications
Series: HiPerFET™
Packaging: --
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 12.8 mOhm @ 45A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power - Max: --
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 5420pF @ 25V
FET Feature: --
Power Dissipation (Max): 390W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263AA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Part Number: --
Description

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The IXFA90N20X3 field effect transistor (FET) is a type of metal-oxide-semiconductor field-effect transistor (MOSFET). It is a monolithic chip package and is available with two or three leads. It is used in a variety of applications, such as motor control, switching, amplifier design, and digital circuits. It has some unique features that make it particularly suitable for specific applications.

The IXFA90N20X3 is primarily a power MOSFET device and is therefore a good choice for load-switching, linear regulator, and driver applications. It is designed with low on-state resistance and high-speed switching, which makes it an excellent choice for high-power applications. Its three-lead configuration allows for differential gate control and maximizes the power-saving advantages of MOSFETs.

The IXFA90N20X3 uses a channel enhancement process, which means that its channel is formed from the added elemets, such as arsenic and phosphorous, that are deposited onto the semiconductor substrate. These elements react with the substrate to form a conducting channel between the source and the drain. This channel control enables the gate voltage to control the current exchange between the source and the drain.

In operation, the IXFA90N20X3 acts like a full-fledged switch connected between the source and the drain. As the voltage applied to the gate increases, the amount of electrons being exchanged by the drain and the source increases, allowing current to flow between them. Conversely, when the gate voltage is decreased, the amount of current exchanged decreases and the device acts as an open switch. This type of control allows the IXFA90N20X3 to be used to precisely control the amount of current flowing through a circuit.

The IXFA90N20X3 has many advantages over other MOSFET types. It has a high frequency response, and it is able to switch quickly between on and off states. This makes it suitable for high-speed systems such as microprocessors, where the ability to quickly switch between on and off states is critical. It also has a low on-resistance, making it an ideal choice for applications where power efficiency is vital. The IXFA90N20X3 is a low-cost alternative to more expensive FETs, making it attractive for applications where cost is a factor.

The IXFA90N20X3 is a versatile and powerful MOSFET device. It is ideal for high-speed switching, linear regulator, and driver applications, and its low on-resistance and three-lead configuration allow it to be used to precisely control the amount of current flowing through a circuit. Its wide range of features and low cost make it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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