Allicdata Part #: | IXFA18N60X-ND |
Manufacturer Part#: |
IXFA18N60X |
Price: | $ 4.19 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 18A TO-263AA |
More Detail: | N-Channel 600V 18A (Tc) 320W (Tc) Surface Mount TO... |
DataSheet: | IXFA18N60X Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 3.77244 |
Vgs(th) (Max) @ Id: | 4.5V @ 1.5mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 320W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1440pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 230 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFA18N60X is an advanced n-channel MOSFET that combines the latest design and fabrication technology. It has an extremely low on-resistance, making it perfect for high switching or low signal applications such as power switches and transistor level amplifiers. The IXFA18N60X is designed to handle a wide range of voltages and can operate at high frequencies up to 300 MHz.
The IXFA18N60X is an enhancement-mode transistor, and it is constructed from three layers of semiconductor materials, typically silicon, and sandwiched between two isolation materials, such as silicon dioxide. The three layers are formed when an oxide layer is built up over the surface of a silicon substrate. A gate-insulator and the gate electrode complete the construction of the transistor.
This transistor works on the principle of majority carriers, the electrons and holes. The majority carriers are created when a voltage is applied to the source. At the drain, the electrons and holes travel along the channel, and their paths are controlled by a gate voltage. This gate voltage can be positive or negative, and is typically on the order of V gs = 2V to 10V.
The IXFA18N60X is a great choice for applications that require a low on-resistance and fast switching times. It has an extremely low on-resistance of 8 milliohms, making it capable of handling high switching or low signal applications. It also has a fast switching time of less than 2ns, making it perfect for high frequency or low signal circuits. The IXFA18N60X is an ideal choice for power switching, motor control, and transistor level amplifiers. It is also suitable for RF applications such as cellular phone base stations and Wi-Fi transmitters/receivers.
The IXFA18N60X combines advanced fabrication technology with an extremely low on-resistance to provide improved performance. It is well suited for high switching or low signal applications, and its fast switching time makes it perfect for high frequency or low signal circuits. Its low on-resistance makes it able to handle high currents, making it an ideal choice for motor control, power switching, and transistor-level amplifiers. The IXFA18N60X is an excellent choice for applications requiring a low on-resistance and fast switching times.
The specific data is subject to PDF, and the above content is for reference
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