| Allicdata Part #: | IXFK120N25P-ND |
| Manufacturer Part#: |
IXFK120N25P |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 250V 120A TO-264 |
| More Detail: | N-Channel 250V 120A (Tc) 700W (Tc) Through Hole TO... |
| DataSheet: |  IXFK120N25P Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 5V @ 4mA |
| Package / Case: | TO-264-3, TO-264AA |
| Supplier Device Package: | TO-264AA (IXFK) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 700W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 8000pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
| Series: | PolarHT™ HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 24 mOhm @ 60A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
| Drain to Source Voltage (Vdss): | 250V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFK120N25P is an enhancement mode, N-channel Power MOSFET. It is part of a series of advanced power MOSFETs from IXYS, specifically developed for high power switching applications. This device is manufactured using IXYS\' proprietary TrenchFET Power MOSFET technology and parent company Teledyne\'s advanced design methodologies.
The MOSFET has a number of unique features, making it ideal for power-switching applications, such as power switching in DC-DC converters, audio and Lighting equipment, computer peripherals, high frequency converters, and motor drives. The IXFK120N25P has a high switching speed, low gate charge and low on-resistance breaking down any barrier in achieving the highest possible performance. Its high-temperature operation makes it particularly suitable for high-end consumer and industrial and applications.
The IXFK120N25P is available in the industry-standard TO-252 package. It offers superior electrical performance with a Power Dissipation of 412W, a Maximum Drain-Source Voltage of 25V, and a Continuous Drain Current of 28A. The device also offers excellent thermal performance, and its maximum operation temperature is 125ºC.
The working principle of the IXFK120N25P is very simple. It uses an enhancement mode N-channel MOSFET design, in which a voltage-controlled potential difference is applied across the Gate-Drain of the MOSFET. This potential difference creates an electrostatic field, which in turn modulates the electric current flowing through the MOSFET. The amount of current flowing through the MOSFET is proportional to the voltage applied across the Gate-Drain, thus allowing for precise control of the current and switching speed.
The IXFK120N25P is an ideal component for a wide range of power-switching applications. It offers superior electrical performance, excellent thermal performance and industry-standard TO-252 packages, making it suitable for a wide range of high-performance and high-end applications.
The specific data is subject to PDF, and the above content is for reference
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