IXFK180N25T

Vgs(th) (Max) @ Id:	5V @ 8mA
Package / Case:	TO-264-3, TO-264AA
Supplier Device Package:	TO-264AA (IXFK)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1390W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	28000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	345nC @ 10V
Series:	GigaMOS™
Rds On (Max) @ Id, Vgs:	12.9 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFK180N25T is a dual-gate enhancement mode mosfet that is a type of field-effect transistor (FET). It is a single FET, meaning that it consists of only one active device, amenable to wide applications. This mosfet is typically used as an amplifier and is ideal for radio frequency (RF) applications.The IXFK180N25T is suitable for use in a variety of applications, including radio frequency amplifiers, transmitters, and even robots with high current demands. The mosfet is smaller than conventional transistors, making it suitable for use in tight and confined spaces.When it comes to RF applications, the IXFK180N25T contributes to the stability of signal transfer and reduce the non-linear reactance of the signal. This ensures that signal quality remains constant even in the presence of changes in environment, like signal noise and temperature.The IXFK180N25T can also be used as a signal amplifier. The mosfet operates as an amplifier by providing an amplifying signal from a low-power circuit to a high-power circuit. The IXFK180N25T works by using the input signal to create an output signal with higher current and voltage. The output signal is controlled by varying the gate potential, thus allowing for the adjustment of amplification.The IXFK180N25T also exhibits a low transconductance when compared to other types of FETs, making it an ideal choice for applications that require buffering and gain control.Additionally, the IXFK180N25T is resistant to damage from electrostatic discharge (ESD). This is due to the internal circuitry of the mosfet which deflects the majority of the charge from the human body. This means that the mosfet will not be damaged even if it comes into contact with an electrostatic charge.The IXFK180N25T is also a good choice for applications that involve power switching, such as in motor control. The mosfet can withstand high voltages, up to 25V, and can operate at high frequencies, up to 18GHz. This makes the IXFK180N25T suitable for use in applications that involve the control of high-speed motors and servos.The IXFK180N25T is also an ideal switching device as it has fast switching times, enabling fast response times to control signals. This makes the IXFK180N25T suitable for use in switching applications, such as microcontrollers.In conclusion, the IXFK180N25T is a versatile, single FET device with a wide range of applications. It is suitable for use in radio frequency amplifiers, microcontrollers, motor controllers, and other power switching applications. The IXFK180N25T is also resistant to electrostatic discharge and has fast switching times for fast response rates. The IXFK180N25T is ideal for tight and confined spaces due to its small size, making it a great choice for many projects.

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