IXFK50N50 Allicdata Electronics
Allicdata Part #:

IXFK50N50-ND

Manufacturer Part#:

IXFK50N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 50A TO-264AA
More Detail: N-Channel 500V 50A (Tc) 560W (Tc) Through Hole TO-...
DataSheet: IXFK50N50 datasheetIXFK50N50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264AA (IXFK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 560W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 80 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFK50N50 is a fast-switching and low-turn-on voltage MOSFET, designed for multiple applications. The device has a voltage range of up to 500V and a power rating of up to 55A. In addition, it has a low on-resistance and an avalanche energy-dissipation range of up to 10 mJ, making it an ideal choice for a variety of motor and lighting applications.

The IXFK50N50 is ideal for use in a variety of motor drives, such as pumps, actuators, fans and other general motor drive applications. It can also be used in a variety of lighting applications, such as backlighting, and can be used as an optimally efficient switch in many other applications.

The main features and advantages of the IXFK50N50 include:

  • Low turn-on voltage
  • Fast switching speed
  • High voltage rating and current capacity
  • Avalanche energy dissipation up to 10 mJ
  • Low on-resistance

The working principle of the IXFK50N50 is based on that of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The MOSFET consists of three terminal – the source, gate and drain – and is a voltage controlled device. The source terminal is where the supply voltage is applied, and it is also the point where the other two terminals are connected together. The gate terminal is the control terminal, and this voltage decides whether the device is in its on or off state. In its on state, the drain terminal will be at a lower voltage than the source terminal, allowing current to flow. In its off state, the drain terminal is at the same voltage as the source terminal, and no current is able to flow through the device.

The IXFK50N50 can be utilized in a variety of applications to provide an efficient switch for controlling current. It is commonly used for motor and lighting applications, as it can providde fast switching and an effective low turn-on voltage for supressing power dissipation. In addition, it has a high voltage rating and current capacity, making it a good choice for high power applications. Finally, it has an avalanche energy dissipation up to 10 mJ, making it suitable for use in applications where high energy is present.

In summary, the IXFK50N50 is an effective and efficient MOSFET, which can be used in a variety of motor drive and lighting applications. It has a low turn-on voltage and fast switching speed. In addition, it has a high voltage rating and current capacity, an avalanche energy dissipation up to 10 mJ, and a low on-resistance. All these features make it a great choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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